Photoluminescence properties of ion beam synthesized β-FeSi 2

Yoshihito Maeda, Yoshikazu Terai, Masaru Itakura, Noriyuki Kuwano

研究成果: ジャーナルへの寄稿Conference article

77 引用 (Scopus)

抄録

Effects of structural changes near the interface, the implantation dose and the precipitate morphology on photoluminescence (PL) properties of ion-beam synthesized (IBS) β-FeSi2 have been investigated. The intrinsic PL spectrum attributed to the interband transition of β-FeSi2 was found by examining the dependence of the PL peak energy on temperature and the excitation power.

元の言語英語
ページ(範囲)160-164
ページ数5
ジャーナルThin Solid Films
461
発行部数1
DOI
出版物ステータス出版済み - 8 2 2004
イベントProceedings of Symposium on Semiconducting Silicides - Yokohama, 日本
継続期間: 10 8 200310 13 2003

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Ion beams
Photoluminescence
ion beams
photoluminescence
Precipitates
precipitates
implantation
dosage
excitation
Temperature
temperature
energy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

これを引用

Photoluminescence properties of ion beam synthesized β-FeSi 2. / Maeda, Yoshihito; Terai, Yoshikazu; Itakura, Masaru; Kuwano, Noriyuki.

:: Thin Solid Films, 巻 461, 番号 1, 02.08.2004, p. 160-164.

研究成果: ジャーナルへの寄稿Conference article

Maeda, Yoshihito ; Terai, Yoshikazu ; Itakura, Masaru ; Kuwano, Noriyuki. / Photoluminescence properties of ion beam synthesized β-FeSi 2. :: Thin Solid Films. 2004 ; 巻 461, 番号 1. pp. 160-164.
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