Photoluminescence quenching by optical bias in AlGaAs/GaAs single quantum wells

Tomohiro Sakai, Takayuki Watanabe, Yasuo Cho, Kaori Matsuura, Hiroshi Funakubo

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抜粋

Anomalous photoluminescence characteristics are reported for AlGaAs/GaAs single quantum wells with one-monolayer-thick InAs inserted at the center of the GaAs well under an external electric field. The photoluminescence produced by exciting only the quantum well is strongly quenched when simultaneous excitation is performed using a high-energy light which can excite both the quantum well and the AlGaAs barrier layers. Since no prominent increase in the photocurrent accompanies the photoluminescence quenching, an efficient recombination center becomes operative under the simultaneous high-energy excitation. A carrier trapping center in AlGaAs which becomes active as a nonradiative recombination center after trapping carriers is considered to explain the observed result.

元の言語英語
ページ(範囲)6477-6480
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
40
発行部数11
出版物ステータス出版済み - 11 1 2001
外部発表Yes

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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