Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi₂ Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering

Weerasaruth Kaenrai, Nathaporn Promros, Phongsaphak Sittimart, Rawiwan Chaleawpong, Peerasil Charoenyuenyao, Thanachai Changcharoen, Adison Nopparuchikun, Tomohiro Nogami, Tsuyoshi Yoshitake

研究成果: ジャーナルへの寄稿記事

抄録

p-Type Si/intrinsic Si/n-type nanocrystalline iron disilicide heterojunctions were created by utilizing facing targets direct-current sputtering at the pressure of 1.33×10-1 Pa that investigated the photovoltaic properties. They exhibited a large leakage current and a small energy conversion efficiency of 0.62%. From using the method of Nicollian and Brews, the series resistance (Rs) values at zero bias voltage were 7.40 Ω at 2 MHz and 7.57 Ω at 50 kHz, respectively, which were in agreement with that estimated by the means of Norde. From applying the method of Hill-Coleman, the interface state density (nss) values were 3.15×1015 cm-2 eV-1 at 50 kHz and 8.93×1013 cm-2 eV-1 at 2 MHz. The obtained results revealed the presence of Rs and nss at the junction interface, which should be the potential cause of spoiled photovoltaic performance in the heterojunctions.

元の言語英語
ページ(範囲)1445-1450
ページ数6
ジャーナルJournal of Nanoscience and Nanotechnology
19
発行部数3
DOI
出版物ステータス出版済み - 3 1 2019

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Iron
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All Science Journal Classification (ASJC) codes

  • Medicine(all)

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Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi₂ Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering. / Kaenrai, Weerasaruth; Promros, Nathaporn; Sittimart, Phongsaphak; Chaleawpong, Rawiwan; Charoenyuenyao, Peerasil; Changcharoen, Thanachai; Nopparuchikun, Adison; Nogami, Tomohiro; Yoshitake, Tsuyoshi.

:: Journal of Nanoscience and Nanotechnology, 巻 19, 番号 3, 01.03.2019, p. 1445-1450.

研究成果: ジャーナルへの寄稿記事

Kaenrai, Weerasaruth ; Promros, Nathaporn ; Sittimart, Phongsaphak ; Chaleawpong, Rawiwan ; Charoenyuenyao, Peerasil ; Changcharoen, Thanachai ; Nopparuchikun, Adison ; Nogami, Tomohiro ; Yoshitake, Tsuyoshi. / Photovoltaic Properties and Series Resistance of p-Type Si/Intrinsic Si/n-Type Nanocrystalline FeSi₂ Heterojunctions Created by Utilizing Facing-Targets Direct-Current Sputtering. :: Journal of Nanoscience and Nanotechnology. 2019 ; 巻 19, 番号 3. pp. 1445-1450.
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abstract = "p-Type Si/intrinsic Si/n-type nanocrystalline iron disilicide heterojunctions were created by utilizing facing targets direct-current sputtering at the pressure of 1.33×10-1 Pa that investigated the photovoltaic properties. They exhibited a large leakage current and a small energy conversion efficiency of 0.62{\%}. From using the method of Nicollian and Brews, the series resistance (Rs) values at zero bias voltage were 7.40 Ω at 2 MHz and 7.57 Ω at 50 kHz, respectively, which were in agreement with that estimated by the means of Norde. From applying the method of Hill-Coleman, the interface state density (nss) values were 3.15×1015 cm-2 eV-1 at 50 kHz and 8.93×1013 cm-2 eV-1 at 2 MHz. The obtained results revealed the presence of Rs and nss at the junction interface, which should be the potential cause of spoiled photovoltaic performance in the heterojunctions.",
author = "Weerasaruth Kaenrai and Nathaporn Promros and Phongsaphak Sittimart and Rawiwan Chaleawpong and Peerasil Charoenyuenyao and Thanachai Changcharoen and Adison Nopparuchikun and Tomohiro Nogami and Tsuyoshi Yoshitake",
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AU - Promros, Nathaporn

AU - Sittimart, Phongsaphak

AU - Chaleawpong, Rawiwan

AU - Charoenyuenyao, Peerasil

AU - Changcharoen, Thanachai

AU - Nopparuchikun, Adison

AU - Nogami, Tomohiro

AU - Yoshitake, Tsuyoshi

PY - 2019/3/1

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