Physics of ferroelectric interfaces: An attempt at nanoferroelectric physics

研究成果: 著書/レポートタイプへの貢献

4 引用 (Scopus)

抄録

Experiments on devices can be regarded as part of basic physics. Here, theoretical analyses of devices using the interface in a ferroelectric junction reveal novel basic properties unknown in conventional experiments. Devices using interfaces in ferroelectric junctions are grouped into two types: (1) the lateral-type, or field-effect, devices that use the transconductance, i.e., the conduction parallel to the interface; and (2) the vertical-type, or diode-like, devices, in which the conduction is perpendicular to the interface and the current flows through the ferroelectric. The discussion below concentrates on the field-effect type (1). On the other hand, the other type of devices have recently attracted intense interest due to the resistance RAM (R-RAM). Additionally, modulation of the tunneling current and the photovoltaic effect have been demonstrated. Details of these topics will be discussed elsewhere. We start our journey by assuming for the present that the ferroelectric is an ideal insulator.

元の言語英語
ホスト出版物のタイトルFerroelectric Thin Films
ホスト出版物のサブタイトルBasic Properties and Device Physics for Memory Applications
ページ177-199
ページ数23
98
出版物ステータス出版済み - 2 5 2005

出版物シリーズ

名前Topics in Applied Physics
98
ISSN(印刷物)0303-4216
ISSN(電子版)1437-0859

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physics
conduction
photovoltaic effect
transconductance
diodes
insulators
modulation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Watanabe, Y. (2005). Physics of ferroelectric interfaces: An attempt at nanoferroelectric physics. : Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications (巻 98, pp. 177-199). (Topics in Applied Physics; 巻数 98).

Physics of ferroelectric interfaces : An attempt at nanoferroelectric physics. / Watanabe, Yukio.

Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. 巻 98 2005. p. 177-199 (Topics in Applied Physics; 巻 98).

研究成果: 著書/レポートタイプへの貢献

Watanabe, Y 2005, Physics of ferroelectric interfaces: An attempt at nanoferroelectric physics. : Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. 巻. 98, Topics in Applied Physics, 巻. 98, pp. 177-199.
Watanabe Y. Physics of ferroelectric interfaces: An attempt at nanoferroelectric physics. : Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. 巻 98. 2005. p. 177-199. (Topics in Applied Physics).
Watanabe, Yukio. / Physics of ferroelectric interfaces : An attempt at nanoferroelectric physics. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. 巻 98 2005. pp. 177-199 (Topics in Applied Physics).
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