Plasma CVD for producing Si quantum dot films

Shinya Iwashita, Hiroomi Miyahara, Kazunori Koga, Masaharu Shiratani, Shota Nunomura, Michio Kondo

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

Si quantum dot films are deposited using a multi-hollow discharge plasma CVD method. For the method, Si nano-crystallites of a small size dispersion and radicals are produced using H2+SiH4 VHF discharges, and then they are co-deposited on to a substrate to form Si quantum dot films, that is, a-Si:H films containing nano-crystallites. The films have a wide optical band gap of 1.8 eV and a large optical absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density below 1×1016 cm-3 and show high stability against light soaking. These results suggest that the Si quantum dot films are promising materials for solar cells.

本文言語英語
ホスト出版物のタイトルProceedings of the 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
ページ558-560
ページ数3
DOI
出版ステータス出版済み - 12 1 2006
イベント22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV - Matsue, 日本
継続期間: 9 25 20069 29 2006

出版物シリーズ

名前Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
2
ISSN(印刷版)1093-2941

その他

その他22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
Country日本
CityMatsue
Period9/25/069/29/06

All Science Journal Classification (ASJC) codes

  • Software
  • Computer Networks and Communications

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