Plasma CVD for producing Si quantum dot films

Shinya Iwashita; Hiroomi Miyahara; Kazunori Koga; Masaharu Shiratani; Shota Nunomura; Michio Kondo

doi:10.1109/DEIV.2006.357362

Plasma CVD for producing Si quantum dot films

Shinya Iwashita, Hiroomi Miyahara, Kazunori Koga, Masaharu Shiratani, Shota Nunomura, Michio Kondo

電子デバイス工学

研究成果: Chapter in Book/Report/Conference proceeding › Conference contribution

抄録

Si quantum dot films are deposited using a multi-hollow discharge plasma CVD method. For the method, Si nano-crystallites of a small size dispersion and radicals are produced using H₂+SiH₄ VHF discharges, and then they are co-deposited on to a substrate to form Si quantum dot films, that is, a-Si:H films containing nano-crystallites. The films have a wide optical band gap of 1.8 eV and a large optical absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density below 1×10¹⁶ cm^-3 and show high stability against light soaking. These results suggest that the Si quantum dot films are promising materials for solar cells.

本文言語	英語
ホスト出版物のタイトル	Proceedings of the 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
ページ	558-560
ページ数	3
DOI	https://doi.org/10.1109/DEIV.2006.357362
出版ステータス	出版済み - 12 1 2006
イベント	22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV - Matsue, 日本継続期間: 9 25 2006 → 9 29 2006

出版物シリーズ

名前	Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
巻	2
ISSN（印刷版）	1093-2941

その他

その他	22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV
Country	日本
City	Matsue
Period	9/25/06 → 9/29/06

All Science Journal Classification (ASJC) codes

Software
Computer Networks and Communications

文献へのアクセス

10.1109/DEIV.2006.357362

フィンガープリント「Plasma CVD for producing Si quantum dot films」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル

Iwashita, S., Miyahara, H., Koga, K., Shiratani, M., Nunomura, S., & Kondo, M. (2006). Plasma CVD for producing Si quantum dot films. In Proceedings of the 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV (pp. 558-560). [4194943] (Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV; Vol. 2). https://doi.org/10.1109/DEIV.2006.357362

Plasma CVD for producing Si quantum dot films. / Iwashita, Shinya; Miyahara, Hiroomi; Koga, Kazunori ; Shiratani, Masaharu; Nunomura, Shota; Kondo, Michio.

Proceedings of the 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV. 2006. p. 558-560 4194943 (Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV; Vol. 2).

研究成果: Chapter in Book/Report/Conference proceeding › Conference contribution

Iwashita, S, Miyahara, H, Koga, K , Shiratani, M, Nunomura, S & Kondo, M 2006, Plasma CVD for producing Si quantum dot films. in Proceedings of the 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV., 4194943, Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, vol. 2, pp. 558-560, 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV, Matsue, 日本, 9/25/06. https://doi.org/10.1109/DEIV.2006.357362

Iwashita S, Miyahara H, Koga K , Shiratani M, Nunomura S, Kondo M. Plasma CVD for producing Si quantum dot films. In Proceedings of the 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV. 2006. p. 558-560. 4194943. (Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV). https://doi.org/10.1109/DEIV.2006.357362

Iwashita, Shinya ; Miyahara, Hiroomi ; Koga, Kazunori ; Shiratani, Masaharu ; Nunomura, Shota ; Kondo, Michio. / Plasma CVD for producing Si quantum dot films. Proceedings of the 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV. 2006. pp. 558-560 (Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV).

@inproceedings{01d166c8920b4e958ef8eb9f8fde090e,

title = "Plasma CVD for producing Si quantum dot films",

abstract = "Si quantum dot films are deposited using a multi-hollow discharge plasma CVD method. For the method, Si nano-crystallites of a small size dispersion and radicals are produced using H2+SiH4 VHF discharges, and then they are co-deposited on to a substrate to form Si quantum dot films, that is, a-Si:H films containing nano-crystallites. The films have a wide optical band gap of 1.8 eV and a large optical absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density below 1×1016 cm-3 and show high stability against light soaking. These results suggest that the Si quantum dot films are promising materials for solar cells.",

author = "Shinya Iwashita and Hiroomi Miyahara and Kazunori Koga and Masaharu Shiratani and Shota Nunomura and Michio Kondo",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/DEIV.2006.357362",

language = "English",

isbn = "1424401925",

series = "Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV",

pages = "558--560",

booktitle = "Proceedings of the 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV",

note = "22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV ; Conference date: 25-09-2006 Through 29-09-2006",

}

TY - GEN

T1 - Plasma CVD for producing Si quantum dot films

AU - Iwashita, Shinya

AU - Miyahara, Hiroomi

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Nunomura, Shota

AU - Kondo, Michio

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Si quantum dot films are deposited using a multi-hollow discharge plasma CVD method. For the method, Si nano-crystallites of a small size dispersion and radicals are produced using H2+SiH4 VHF discharges, and then they are co-deposited on to a substrate to form Si quantum dot films, that is, a-Si:H films containing nano-crystallites. The films have a wide optical band gap of 1.8 eV and a large optical absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density below 1×1016 cm-3 and show high stability against light soaking. These results suggest that the Si quantum dot films are promising materials for solar cells.

AB - Si quantum dot films are deposited using a multi-hollow discharge plasma CVD method. For the method, Si nano-crystallites of a small size dispersion and radicals are produced using H2+SiH4 VHF discharges, and then they are co-deposited on to a substrate to form Si quantum dot films, that is, a-Si:H films containing nano-crystallites. The films have a wide optical band gap of 1.8 eV and a large optical absorption coefficient similar to those of a-Si:H films. They also have a low initial defect density below 1×1016 cm-3 and show high stability against light soaking. These results suggest that the Si quantum dot films are promising materials for solar cells.

UR - http://www.scopus.com/inward/record.url?scp=47349120550&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47349120550&partnerID=8YFLogxK

U2 - 10.1109/DEIV.2006.357362

DO - 10.1109/DEIV.2006.357362

M3 - Conference contribution

AN - SCOPUS:47349120550

SN - 1424401925

SN - 9781424401925

T3 - Proceedings - International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV

SP - 558

EP - 560

BT - Proceedings of the 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV

T2 - 22nd International Symposium on Discharges and Electrical Insulation in Vacuum, ISDEIV

Y2 - 25 September 2006 through 29 September 2006

ER -