Plasma deposition of diamond at low pressures: A review

研究成果: ジャーナルへの寄稿記事

8 引用 (Scopus)

抄録

Plasma deposition techniques of nanocrystalline and microcrystalline diamond and related mechanisms at pressures below 0.1 torr are reviewed. The mechanism of nucleation and growth of diamond in low-pressure conditions is discussed theoretically and experimentally along with the role of radicals and ions in two different ion-energy ranges. For ion impact energies below 20-30 eV, diamond deposition occurs on a surface. The growth process is limited by the substrate temperature and the flux of hydrogen radicals when the ion energy is reduced enough to several eV as shown by a kinetic rate analysis for radical species. The nucleation process is limited mainly by the degree of carbon saturation and, hence, the flux of carbon-containing species. For ion impact energies above 20-30 eV, diamond deposition occurs beneath a surface. Renucleation hinders the growth and diamond nanocrystals are embedded in an amorphous carbon matrix. The nucleation process depends strongly upon the ion energy, ion-to-depositing flux ratio, and substrate temperature as shown by the film density increment based on the subplantation model.

元の言語英語
記事番号6862062
ページ(範囲)3862-3869
ページ数8
ジャーナルIEEE Transactions on Plasma Science
42
発行部数12
DOI
出版物ステータス出版済み - 12 1 2014

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low pressure
diamonds
ion impact
nucleation
ions
carbon
energy
nanocrystals
saturation
temperature
kinetics
hydrogen
matrices

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Condensed Matter Physics

これを引用

Plasma deposition of diamond at low pressures : A review. / Tsutsui, Kungen.

:: IEEE Transactions on Plasma Science, 巻 42, 番号 12, 6862062, 01.12.2014, p. 3862-3869.

研究成果: ジャーナルへの寄稿記事

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