Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma

N. Itagaki, A. Fukuda, T. Yoshizawa, M. Shindo, Y. Ueda, Y. Kawai

研究成果: Contribution to journalArticle査読

18 被引用数 (Scopus)

抄録

Pulse modulation of the incident microwave power was investigated for the control of plasma parameters and improvement of the films deposited in ECR plasma. Measurements of the temporal variation of plasma parameters in the pulse-modulated ECR plasma indicate that the electron density varies little in time while the electron temperature decreases rapidly within 10 μs after the discharge. The results suggest that pulse modulation where the power-off period is approximately 10 μs enables reduction of the mean electron temperature while keeping a high electron density. Furthermore, we have prepared hydrogenated amorphous silicon films by the ECR plasma CVD method. It was found that the ratio of photoconductivity to dark conductivity of the film was improved from 103 to 2.5 x 105 without heating the substrate and the deposition rate was 14 Å/s by pulse-modulated ECR plasma. (C) 2000 Elsevier Science B.V. All rights reserved.

本文言語英語
ページ(範囲)54-57
ページ数4
ジャーナルSurface and Coatings Technology
131
1-3
DOI
出版ステータス出版済み - 2000

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

フィンガープリント

「Plasma parameter measurements and deposition of a-Si:H thin films in pulsed ECR plasma」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル