pn junction formation by Si paste coated on metal substrates

Yan Li, Hiroshi Inokuchi, Takahiro Orita, Kunihiko Maejima, Kensuke Nakashima, Satoshi Ooue, Hiroshige Matsumoto, Yoshimine Kato

研究成果: ジャーナルへの寄稿記事

抄録

In this work, p- and n-type Si pastes were prepared in a way by utilizing a planetary ball miller to pulverize Si source material. pn homojunction was formed by coating Si pastes onto metal substrates, followed by annealing under Ar or Ar + H 2 atmosphere. The optimal annealing temperature was found to be around 1050 °C that exhibits the lowest resistivity. A typical rectifying property of diode with small photovoltaic was observed for the device fabricated. It is anticipated that Si pastes could have potential for low cost device fabrication such as solar cells. All Cz Si ingot growth procedures could be skipped, consequently it is expected that the manufacturing cost for solar cell can be greatly reduced.

元の言語英語
ページ(範囲)6693-6700
ページ数8
ジャーナルJournal of Materials Science: Materials in Electronics
30
発行部数7
DOI
出版物ステータス出版済み - 4 15 2019

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Ointments
Solar cells
Metals
Annealing
Substrates
Ingots
solar cells
metals
Costs
homojunctions
Diodes
annealing
ingots
Fabrication
Coatings
balls
manufacturing
diodes
costs
coatings

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

pn junction formation by Si paste coated on metal substrates. / Li, Yan; Inokuchi, Hiroshi; Orita, Takahiro; Maejima, Kunihiko; Nakashima, Kensuke; Ooue, Satoshi; Matsumoto, Hiroshige; Kato, Yoshimine.

:: Journal of Materials Science: Materials in Electronics, 巻 30, 番号 7, 15.04.2019, p. 6693-6700.

研究成果: ジャーナルへの寄稿記事

Li, Yan ; Inokuchi, Hiroshi ; Orita, Takahiro ; Maejima, Kunihiko ; Nakashima, Kensuke ; Ooue, Satoshi ; Matsumoto, Hiroshige ; Kato, Yoshimine. / pn junction formation by Si paste coated on metal substrates. :: Journal of Materials Science: Materials in Electronics. 2019 ; 巻 30, 番号 7. pp. 6693-6700.
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AU - Li, Yan

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AU - Orita, Takahiro

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AU - Ooue, Satoshi

AU - Matsumoto, Hiroshige

AU - Kato, Yoshimine

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