TY - JOUR
T1 - pn junction formation by Si paste coated on metal substrates
AU - Li, Yan
AU - Inokuchi, Hiroshi
AU - Orita, Takahiro
AU - Maejima, Kunihiko
AU - Nakashima, Kensuke
AU - Ooue, Satoshi
AU - Matsumoto, Hiroshige
AU - Kato, Yoshimine
N1 - Funding Information:
Acknowledgements This work was supported by Japan Society for the Promotion of Science (JSPS) KAKENHI Grant Number JP16K13720. Authors would like to thank Prof. Satoru Tanaka and Mr. Kagiwara for letting us use the Raman spectrometer. We also would like to acknowledge Prof. Hiroaki Nakano for letting us use the wet facilities.
Publisher Copyright:
© 2019, Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2019/4/15
Y1 - 2019/4/15
N2 - In this work, p- and n-type Si pastes were prepared in a way by utilizing a planetary ball miller to pulverize Si source material. pn homojunction was formed by coating Si pastes onto metal substrates, followed by annealing under Ar or Ar + H 2 atmosphere. The optimal annealing temperature was found to be around 1050 °C that exhibits the lowest resistivity. A typical rectifying property of diode with small photovoltaic was observed for the device fabricated. It is anticipated that Si pastes could have potential for low cost device fabrication such as solar cells. All Cz Si ingot growth procedures could be skipped, consequently it is expected that the manufacturing cost for solar cell can be greatly reduced.
AB - In this work, p- and n-type Si pastes were prepared in a way by utilizing a planetary ball miller to pulverize Si source material. pn homojunction was formed by coating Si pastes onto metal substrates, followed by annealing under Ar or Ar + H 2 atmosphere. The optimal annealing temperature was found to be around 1050 °C that exhibits the lowest resistivity. A typical rectifying property of diode with small photovoltaic was observed for the device fabricated. It is anticipated that Si pastes could have potential for low cost device fabrication such as solar cells. All Cz Si ingot growth procedures could be skipped, consequently it is expected that the manufacturing cost for solar cell can be greatly reduced.
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U2 - 10.1007/s10854-019-00980-3
DO - 10.1007/s10854-019-00980-3
M3 - Article
AN - SCOPUS:85062154396
VL - 30
SP - 6693
EP - 6700
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 7
ER -
