抄録
In this work, p- and n-type Si pastes were prepared in a way by utilizing a planetary ball miller to pulverize Si source material. pn homojunction was formed by coating Si pastes onto metal substrates, followed by annealing under Ar or Ar + H 2 atmosphere. The optimal annealing temperature was found to be around 1050 °C that exhibits the lowest resistivity. A typical rectifying property of diode with small photovoltaic was observed for the device fabricated. It is anticipated that Si pastes could have potential for low cost device fabrication such as solar cells. All Cz Si ingot growth procedures could be skipped, consequently it is expected that the manufacturing cost for solar cell can be greatly reduced.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 6693-6700 |
| ページ数 | 8 |
| ジャーナル | Journal of Materials Science: Materials in Electronics |
| 巻 | 30 |
| 発行部数 | 7 |
| DOI | |
| 出版物ステータス | 出版済み - 4 15 2019 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
これを引用
pn junction formation by Si paste coated on metal substrates. / Li, Yan; Inokuchi, Hiroshi; Orita, Takahiro; Maejima, Kunihiko; Nakashima, Kensuke; Ooue, Satoshi; Matsumoto, Hiroshige; Kato, Yoshimine.
：: Journal of Materials Science: Materials in Electronics, 巻 30, 番号 7, 15.04.2019, p. 6693-6700.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - pn junction formation by Si paste coated on metal substrates
AU - Li, Yan
AU - Inokuchi, Hiroshi
AU - Orita, Takahiro
AU - Maejima, Kunihiko
AU - Nakashima, Kensuke
AU - Ooue, Satoshi
AU - Matsumoto, Hiroshige
AU - Kato, Yoshimine
PY - 2019/4/15
Y1 - 2019/4/15
N2 - In this work, p- and n-type Si pastes were prepared in a way by utilizing a planetary ball miller to pulverize Si source material. pn homojunction was formed by coating Si pastes onto metal substrates, followed by annealing under Ar or Ar + H 2 atmosphere. The optimal annealing temperature was found to be around 1050 °C that exhibits the lowest resistivity. A typical rectifying property of diode with small photovoltaic was observed for the device fabricated. It is anticipated that Si pastes could have potential for low cost device fabrication such as solar cells. All Cz Si ingot growth procedures could be skipped, consequently it is expected that the manufacturing cost for solar cell can be greatly reduced.
AB - In this work, p- and n-type Si pastes were prepared in a way by utilizing a planetary ball miller to pulverize Si source material. pn homojunction was formed by coating Si pastes onto metal substrates, followed by annealing under Ar or Ar + H 2 atmosphere. The optimal annealing temperature was found to be around 1050 °C that exhibits the lowest resistivity. A typical rectifying property of diode with small photovoltaic was observed for the device fabricated. It is anticipated that Si pastes could have potential for low cost device fabrication such as solar cells. All Cz Si ingot growth procedures could be skipped, consequently it is expected that the manufacturing cost for solar cell can be greatly reduced.
UR - http://www.scopus.com/inward/record.url?scp=85062154396&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85062154396&partnerID=8YFLogxK
U2 - 10.1007/s10854-019-00980-3
DO - 10.1007/s10854-019-00980-3
M3 - Article
AN - SCOPUS:85062154396
VL - 30
SP - 6693
EP - 6700
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
SN - 0957-4522
IS - 7
ER -