pn junction formation by Si paste coated on metal substrates

Yan Li, Hiroshi Inokuchi, Takahiro Orita, Kunihiko Maejima, Kensuke Nakashima, Satoshi Ooue, Hiroshige Matsumoto, Yoshimine Kato

    研究成果: Contribution to journalArticle査読

    4 被引用数 (Scopus)

    抄録

    In this work, p- and n-type Si pastes were prepared in a way by utilizing a planetary ball miller to pulverize Si source material. pn homojunction was formed by coating Si pastes onto metal substrates, followed by annealing under Ar or Ar + H 2 atmosphere. The optimal annealing temperature was found to be around 1050 °C that exhibits the lowest resistivity. A typical rectifying property of diode with small photovoltaic was observed for the device fabricated. It is anticipated that Si pastes could have potential for low cost device fabrication such as solar cells. All Cz Si ingot growth procedures could be skipped, consequently it is expected that the manufacturing cost for solar cell can be greatly reduced.

    本文言語英語
    ページ(範囲)6693-6700
    ページ数8
    ジャーナルJournal of Materials Science: Materials in Electronics
    30
    7
    DOI
    出版ステータス出版済み - 4 15 2019

    All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 原子分子物理学および光学
    • 凝縮系物理学
    • 電子工学および電気工学

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