TY - JOUR
T1 - Polarization Doping in a GaN-InN System—Ab Initio Simulation
AU - Ahmad, Ashfaq
AU - Strak, Pawel
AU - Kempisty, Pawel Tomasz
AU - Sakowski, Konrad
AU - Piechota, Jacek
AU - Kangawa, Yoshihiro
AU - Grzegory, Izabella
AU - Leszczynski, Michal
AU - Zytkiewicz, Zbigniew R.
AU - Muziol, Grzegorz
AU - Monroy, Eva
AU - Kaminska, Agata
AU - Krukowski, Stanislaw
N1 - Funding Information:
The research was partially supported by the National Science Centre, Poland - grant number 2021/43/B/ST7/03162 and by Poland National Centre for Research and Development (grant number: TECHMATSTRATEG-III/0003/2019-00) and partially by Japan JST CREST (grant number JPMJCR16N2) and by JSPS KAKENHI (grant number JP16H06418). This research was carried out with the support of the Interdisciplinary Centre for Mathematical and Computational Modelling at the University of Warsaw (ICM UW) under grants no GB77-29, GB84-23 and G88-1169. We gratefully acknowledge Poland’s high-performance computing infrastructure PLGrid (HPC Centers: ACK Cyfronet AGH) for providing computer facilities and support within computational grant no. PLG/2022/015976.
Publisher Copyright:
© 2023 by the authors.
PY - 2023/2
Y1 - 2023/2
N2 - Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it could be obtained from a polarization difference and the concentration slope. It was shown that the GaN-InN polarization difference is changed by piezoelectric effects. The polarization difference is in agreement with the earlier obtained data despite the relatively narrow bandgap for the simulated system. The hole generation may be applied in the design of blue and green laser and light-emitting diodes.
AB - Polarization doping in a GaN-InN system with a graded composition layer was studied using ab initio simulations. The electric charge volume density in the graded concentration part was determined by spatial potential dependence. The emerging graded polarization charge was determined to show that it could be obtained from a polarization difference and the concentration slope. It was shown that the GaN-InN polarization difference is changed by piezoelectric effects. The polarization difference is in agreement with the earlier obtained data despite the relatively narrow bandgap for the simulated system. The hole generation may be applied in the design of blue and green laser and light-emitting diodes.
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U2 - 10.3390/ma16031227
DO - 10.3390/ma16031227
M3 - Article
AN - SCOPUS:85148016361
SN - 1996-1944
VL - 16
JO - Materials
JF - Materials
IS - 3
M1 - 1227
ER -