Polishing Characteristics of MnO 2 Polishing Slurry on the Si-face of SiC Wafer

Tao Yin, Tosiro Doi, Syuhei Kurokawa, Zhao zhong Zhou, Kai ping Feng

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

To realize an efficient and high-quality chemical-mechanical polishing process for the surface of a SiC wafer, a new type of MnO 2 slurry is developed employing the multi-valence and oxidation-reduction characteristics of MnO 2 particles. This slurry is utilized to polish the Si-face of SiC wafers. In this paper, the influences of the polishing particle concentration and the pH of slurry on MRR are analyzed, the polishing performance of the MnO 2 slurry is studied, and the polishing mechanism of the MnO 2 slurry on the SiC wafer is determined. The polishing mechanism of the MnO 2 slurry is verified by selecting commonly used additives, such as KMnO 4 , and the influence of the additive amount on the MRR is analyzed. Finally, the surface morphology of the material after polishing is observed with analytical instruments. The experimental results show that the MRR of the MnO 2 slurry is highly dependent on the pH value of the slurry. The MnO 2 particles tend to convert into MnO 4 - ions in an alkaline environment, and the strong oxidizing property of MnO 4 - ions greatly improves the polishing efficiency. As the MnO 4 - ion concentration increases, the MRR can reach over 600 nm/h, and an ultra-smooth surface with a surface.

元の言語英語
ページ(範囲)1773-1780
ページ数8
ジャーナルInternational Journal of Precision Engineering and Manufacturing
19
発行部数12
DOI
出版物ステータス出版済み - 12 1 2018

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Polishing
Ions
Chemical mechanical polishing
Surface morphology

All Science Journal Classification (ASJC) codes

  • Mechanical Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

これを引用

Polishing Characteristics of MnO 2 Polishing Slurry on the Si-face of SiC Wafer . / Yin, Tao; Doi, Tosiro; Kurokawa, Syuhei; Zhou, Zhao zhong; Feng, Kai ping.

:: International Journal of Precision Engineering and Manufacturing, 巻 19, 番号 12, 01.12.2018, p. 1773-1780.

研究成果: ジャーナルへの寄稿記事

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abstract = "To realize an efficient and high-quality chemical-mechanical polishing process for the surface of a SiC wafer, a new type of MnO 2 slurry is developed employing the multi-valence and oxidation-reduction characteristics of MnO 2 particles. This slurry is utilized to polish the Si-face of SiC wafers. In this paper, the influences of the polishing particle concentration and the pH of slurry on MRR are analyzed, the polishing performance of the MnO 2 slurry is studied, and the polishing mechanism of the MnO 2 slurry on the SiC wafer is determined. The polishing mechanism of the MnO 2 slurry is verified by selecting commonly used additives, such as KMnO 4 , and the influence of the additive amount on the MRR is analyzed. Finally, the surface morphology of the material after polishing is observed with analytical instruments. The experimental results show that the MRR of the MnO 2 slurry is highly dependent on the pH value of the slurry. The MnO 2 particles tend to convert into MnO 4 - ions in an alkaline environment, and the strong oxidizing property of MnO 4 - ions greatly improves the polishing efficiency. As the MnO 4 - ion concentration increases, the MRR can reach over 600 nm/h, and an ultra-smooth surface with a surface.",
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AU - Doi, Tosiro

AU - Kurokawa, Syuhei

AU - Zhou, Zhao zhong

AU - Feng, Kai ping

PY - 2018/12/1

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