Poly-Si TFT with Schottky source/drain

Gou Nakagawa, Kenji Makihira, Mika Nishisaka, Tanemasa Asano

研究成果: ジャーナルへの寄稿会議記事査読


Polycrystalline Si (poly-Si) TFTs with Schottky contacts at the source and drain have been fabricated. The Schottky contacts were made of Ni-silicide. Poly-Si films were prepared by using solid phase crystallization. TFTs were fabricated using a high temperature process. The Schottky source/drain contacts were formed by employing the self-aligned silicide (salicide) process. TFTs showed a good switching characteristic having the on/off current ratio of about 7 orders of magnitude. Due to the nature of the Schottky contact it is possible to reduce the kink in drain current.

ジャーナルSID Conference Record of the International Display Research Conference
出版ステータス出版済み - 12月 1 2001
イベントAsia Display/IDW 2001 - Nagoya, 日本
継続期間: 10月 16 200210月 19 2002

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学


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