Poly-Si TFT with Schottky source/drain

Gou Nakagawa, Kenji Makihira, Mika Nishisaka, Tanemasa Asano

研究成果: ジャーナルへの寄稿Conference article

抜粋

Polycrystalline Si (poly-Si) TFTs with Schottky contacts at the source and drain have been fabricated. The Schottky contacts were made of Ni-silicide. Poly-Si films were prepared by using solid phase crystallization. TFTs were fabricated using a high temperature process. The Schottky source/drain contacts were formed by employing the self-aligned silicide (salicide) process. TFTs showed a good switching characteristic having the on/off current ratio of about 7 orders of magnitude. Due to the nature of the Schottky contact it is possible to reduce the kink in drain current.

元の言語英語
ページ(範囲)443-446
ページ数4
ジャーナルSID Conference Record of the International Display Research Conference
出版物ステータス出版済み - 12 1 2001
イベントAsia Display/IDW 2001 - Nagoya, 日本
継続期間: 10 16 200210 19 2002

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

フィンガープリント Poly-Si TFT with Schottky source/drain' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Nakagawa, G., Makihira, K., Nishisaka, M., & Asano, T. (2001). Poly-Si TFT with Schottky source/drain. SID Conference Record of the International Display Research Conference, 443-446.