Poly-Si TFT with Schottky source/drain

Gou Nakagawa, Kenji Makihira, Mika Nishisaka, Tanemasa Asano

研究成果: ジャーナルへの寄稿会議記事査読

抄録

Polycrystalline Si (poly-Si) TFTs with Schottky contacts at the source and drain have been fabricated. The Schottky contacts were made of Ni-silicide. Poly-Si films were prepared by using solid phase crystallization. TFTs were fabricated using a high temperature process. The Schottky source/drain contacts were formed by employing the self-aligned silicide (salicide) process. TFTs showed a good switching characteristic having the on/off current ratio of about 7 orders of magnitude. Due to the nature of the Schottky contact it is possible to reduce the kink in drain current.

本文言語英語
ページ(範囲)443-446
ページ数4
ジャーナルSID Conference Record of the International Display Research Conference
出版ステータス出版済み - 12月 1 2001
イベントAsia Display/IDW 2001 - Nagoya, 日本
継続期間: 10月 16 200210月 19 2002

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学

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