Polycrystalline Si (poly-Si) TFTs with Schottky contacts at the source and drain have been fabricated. The Schottky contacts were made of Ni-silicide. Poly-Si films were prepared by using solid phase crystallization. TFTs were fabricated using a high temperature process. The Schottky source/drain contacts were formed by employing the self-aligned silicide (salicide) process. TFTs showed a good switching characteristic having the on/off current ratio of about 7 orders of magnitude. Due to the nature of the Schottky contact it is possible to reduce the kink in drain current.
|ジャーナル||SID Conference Record of the International Display Research Conference|
|出版物ステータス||出版済み - 12 1 2001|
|イベント||Asia Display/IDW 2001 - Nagoya, 日本|
継続期間: 10 16 2002 → 10 19 2002
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering