Poly-Si TFT with Schottky source/drain

Gou Nakagawa, Kenji Makihira, Mika Nishisaka, Tanemasa Asano

研究成果: ジャーナルへの寄稿Conference article


Polycrystalline Si (poly-Si) TFTs with Schottky contacts at the source and drain have been fabricated. The Schottky contacts were made of Ni-silicide. Poly-Si films were prepared by using solid phase crystallization. TFTs were fabricated using a high temperature process. The Schottky source/drain contacts were formed by employing the self-aligned silicide (salicide) process. TFTs showed a good switching characteristic having the on/off current ratio of about 7 orders of magnitude. Due to the nature of the Schottky contact it is possible to reduce the kink in drain current.

ジャーナルSID Conference Record of the International Display Research Conference
出版物ステータス出版済み - 12 1 2001
イベントAsia Display/IDW 2001 - Nagoya, 日本
継続期間: 10 16 200210 19 2002

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

フィンガープリント Poly-Si TFT with Schottky source/drain' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Nakagawa, G., Makihira, K., Nishisaka, M., & Asano, T. (2001). Poly-Si TFT with Schottky source/drain. SID Conference Record of the International Display Research Conference, 443-446.