Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass

K. Moto, K. Yamamoto, T. Imajo, T. Suemasu, H. Nakashima, K. Toko

研究成果: Contribution to journalArticle査読

14 被引用数 (Scopus)

抄録

Low-temperature formation of Ge thin-film transistors (TFTs) on insulators has been widely investigated to improve the performance of Si large-scale integrated circuits and mobile terminals. Here, we studied the relationship between the electrical properties of polycrystalline Ge and its TFT performance using high-mobility Ge formed on glass using our recently developed solid-phase crystallization technique. The field-effect mobility μFE and on/off currents of the accumulation-mode TFTs directly reflected the Hall hole mobility μHall, hole concentration, and film thickness of Ge. By thinning the 100-nm thick Ge layer with a large grain size (3.7 μm), we achieved a high μHall (190 cm2/Vs) in a 55-nm thick film that was almost thin enough to fully deplete the channel. The TFT using this Ge layer exhibited both high μFE (170 cm2/Vs) and on/off current ratios (∼102). This is the highest μFE among low-temperature (<500 °C) polycrystalline Ge TFTs without minimizing the channel region (<1 μm).

本文言語英語
論文番号212107
ジャーナルApplied Physics Letters
114
21
DOI
出版ステータス出版済み - 5 27 2019

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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