抄録
Low-temperature formation of Ge thin-film transistors (TFTs) on insulators has been widely investigated to improve the performance of Si large-scale integrated circuits and mobile terminals. Here, we studied the relationship between the electrical properties of polycrystalline Ge and its TFT performance using high-mobility Ge formed on glass using our recently developed solid-phase crystallization technique. The field-effect mobility μFE and on/off currents of the accumulation-mode TFTs directly reflected the Hall hole mobility μHall, hole concentration, and film thickness of Ge. By thinning the 100-nm thick Ge layer with a large grain size (3.7 μm), we achieved a high μHall (190 cm2/Vs) in a 55-nm thick film that was almost thin enough to fully deplete the channel. The TFT using this Ge layer exhibited both high μFE (170 cm2/Vs) and on/off current ratios (∼102). This is the highest μFE among low-temperature (<500 °C) polycrystalline Ge TFTs without minimizing the channel region (<1 μm).
| 元の言語 | 英語 |
|---|---|
| 記事番号 | 212107 |
| ジャーナル | Applied Physics Letters |
| 巻 | 114 |
| 発行部数 | 21 |
| DOI | |
| 出版物ステータス | 出版済み - 5 27 2019 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
これを引用
Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass. / Moto, K.; Yamamoto, K.; Imajo, T.; Suemasu, T.; Nakashima, H.; Toko, K.
：: Applied Physics Letters, 巻 114, 番号 21, 212107, 27.05.2019.研究成果: ジャーナルへの寄稿 › 記事
}
TY - JOUR
T1 - Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass
AU - Moto, K.
AU - Yamamoto, K.
AU - Imajo, T.
AU - Suemasu, T.
AU - Nakashima, H.
AU - Toko, K.
PY - 2019/5/27
Y1 - 2019/5/27
N2 - Low-temperature formation of Ge thin-film transistors (TFTs) on insulators has been widely investigated to improve the performance of Si large-scale integrated circuits and mobile terminals. Here, we studied the relationship between the electrical properties of polycrystalline Ge and its TFT performance using high-mobility Ge formed on glass using our recently developed solid-phase crystallization technique. The field-effect mobility μFE and on/off currents of the accumulation-mode TFTs directly reflected the Hall hole mobility μHall, hole concentration, and film thickness of Ge. By thinning the 100-nm thick Ge layer with a large grain size (3.7 μm), we achieved a high μHall (190 cm2/Vs) in a 55-nm thick film that was almost thin enough to fully deplete the channel. The TFT using this Ge layer exhibited both high μFE (170 cm2/Vs) and on/off current ratios (∼102). This is the highest μFE among low-temperature (<500 °C) polycrystalline Ge TFTs without minimizing the channel region (<1 μm).
AB - Low-temperature formation of Ge thin-film transistors (TFTs) on insulators has been widely investigated to improve the performance of Si large-scale integrated circuits and mobile terminals. Here, we studied the relationship between the electrical properties of polycrystalline Ge and its TFT performance using high-mobility Ge formed on glass using our recently developed solid-phase crystallization technique. The field-effect mobility μFE and on/off currents of the accumulation-mode TFTs directly reflected the Hall hole mobility μHall, hole concentration, and film thickness of Ge. By thinning the 100-nm thick Ge layer with a large grain size (3.7 μm), we achieved a high μHall (190 cm2/Vs) in a 55-nm thick film that was almost thin enough to fully deplete the channel. The TFT using this Ge layer exhibited both high μFE (170 cm2/Vs) and on/off current ratios (∼102). This is the highest μFE among low-temperature (<500 °C) polycrystalline Ge TFTs without minimizing the channel region (<1 μm).
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U2 - 10.1063/1.5093952
DO - 10.1063/1.5093952
M3 - Article
AN - SCOPUS:85066813812
VL - 114
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 21
M1 - 212107
ER -