Position-controlled formation of Si nanopores by chemical vapor deposition of SiC/SOI(100)

Yoshifumi Ikoma, Hafizal Yahaya, Hirofumi Sakita, Yuta Nishino, Teruaki Motooka

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

We investigated the position-controlled nanopore formation in the surface of thin Si layer of a Silicon on Insulator (SOI) substrate by utilizing chemical vapor deposition (CVD). The Si membrane was obtained by anisotropic etching of the handle wafer. The SiC film growth was carried out from the backside surface by utilizing CH3SiH3 pulse jet CVD at the substrate temperature of 900 °C. Square pits with the sizes of ≤0.5 μm were observed on the Si membrane while no pit was formed on the top Si layer. This result indicates that the position of the nanopores on the top Si layer can be controlled without using SiO2 masks on the front side surface.

本文言語英語
ホスト出版物のタイトルSeventh International Conference on Thin Film Physics and Applications
DOI
出版ステータス出版済み - 3 30 2011
イベント7th International Conference on Thin Film Physics and Applications - Shanghai, 中国
継続期間: 9 24 20109 27 2010

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
7995
ISSN(印刷版)0277-786X

その他

その他7th International Conference on Thin Film Physics and Applications
Country中国
CityShanghai
Period9/24/109/27/10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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