POSITRON ANNIHILATION AND RESISTIVITY RECOVERY OF Ni-Si ALLOYS IRRADIATED BY 28 MeV ELECTRONS AT 77 K.

Hideo Watanabe, Hironobu Abe, Eiichi Kuramoto, Naoaki Yoshida

研究成果: Contribution to journalArticle査読

抄録

It has been recognized that radiation produced point defects interact with solute atoms resulting in micro-segregation or depletion of alloying elements at defect sinks. According to the authors' previous study on Ni-Si alloys by means of high voltage electron microscopy, microstructural and microchemical evolution under the electron irradiation strongly depend on the migration of mixed-dumbbells to the defect sinks. To clarify its mechanism, it is very important to have enough information on basic properties of point defects. The objective of the present study is, therefore, to know the properties of radiation produced point defects in Ni-Si alloys by means of positron annihilation lifetime and electrical resistivity measurement.

本文言語英語
ページ(範囲)146-149
ページ数4
ジャーナルAnnual Reports of the Research Reactor Institute, Kyoto University
20
出版ステータス出版済み - 12 1 1987

All Science Journal Classification (ASJC) codes

  • エネルギー工学および電力技術
  • 機械工学

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