It has been recognized that radiation produced point defects interact with solute atoms resulting in micro-segregation or depletion of alloying elements at defect sinks. According to the authors' previous study on Ni-Si alloys by means of high voltage electron microscopy, microstructural and microchemical evolution under the electron irradiation strongly depend on the migration of mixed-dumbbells to the defect sinks. To clarify its mechanism, it is very important to have enough information on basic properties of point defects. The objective of the present study is, therefore, to know the properties of radiation produced point defects in Ni-Si alloys by means of positron annihilation lifetime and electrical resistivity measurement.
|ジャーナル||Annual Reports of the Research Reactor Institute, Kyoto University|
|出版ステータス||出版済み - 12 1 1987|
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