Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation

Hiroshi Nakashima, Yoshiaki Iwamura, Keita Sakamoto, Dong Wang, Kana Hirayama, Keisuke Yamamoto, Haigui Yang

研究成果: Contribution to journalArticle査読

20 被引用数 (Scopus)

抄録

The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO c2 / GeO2 bilayer passivation. PMA at 450°C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from -0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2 / GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6× 1011 to 2.5× 1011 cm-2 eV-1, as results of the nitrogen termination of defects at the SiO2 / GeO2 interface and/or in the GeO2 interlayer.

本文言語英語
論文番号252102
ジャーナルApplied Physics Letters
98
25
DOI
出版ステータス出版済み - 6 20 2011

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

フィンガープリント

「Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO<sub>2</sub> / GeO<sub>2</sub> bilayer passivation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル