Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation

Hiroshi Nakashima, Yoshiaki Iwamura, Keita Sakamoto, Dong Wang, Kana Hirayama, Keisuke Yamamoto, Haigui Yang

研究成果: ジャーナルへの寄稿記事

18 引用 (Scopus)

抄録

The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO c2 / GeO2 bilayer passivation. PMA at 450°C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from -0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2 / GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6× 1011 to 2.5× 1011 cm-2 eV-1, as results of the nitrogen termination of defects at the SiO2 / GeO2 interface and/or in the GeO2 interlayer.

元の言語英語
記事番号252102
ジャーナルApplied Physics Letters
98
発行部数25
DOI
出版物ステータス出版済み - 6 20 2011

Fingerprint

metal oxide semiconductors
passivity
capacitors
annealing
nitrogen atoms
interlayers
hysteresis
dipoles
nitrogen
defects
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

これを引用

Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation. / Nakashima, Hiroshi; Iwamura, Yoshiaki; Sakamoto, Keita; Wang, Dong; Hirayama, Kana; Yamamoto, Keisuke; Yang, Haigui.

:: Applied Physics Letters, 巻 98, 番号 25, 252102, 20.06.2011.

研究成果: ジャーナルへの寄稿記事

@article{4f0ecfdfe088493f981a3f4bc3fbf5cd,
title = "Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation",
abstract = "The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO c2 / GeO2 bilayer passivation. PMA at 450°C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from -0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2 / GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6× 1011 to 2.5× 1011 cm-2 eV-1, as results of the nitrogen termination of defects at the SiO2 / GeO2 interface and/or in the GeO2 interlayer.",
author = "Hiroshi Nakashima and Yoshiaki Iwamura and Keita Sakamoto and Dong Wang and Kana Hirayama and Keisuke Yamamoto and Haigui Yang",
year = "2011",
month = "6",
day = "20",
doi = "10.1063/1.3601480",
language = "English",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

TY - JOUR

T1 - Postmetallization annealing effect of TiN-gate Ge metal-oxide-semiconductor capacitor with ultrathin SiO2 / GeO2 bilayer passivation

AU - Nakashima, Hiroshi

AU - Iwamura, Yoshiaki

AU - Sakamoto, Keita

AU - Wang, Dong

AU - Hirayama, Kana

AU - Yamamoto, Keisuke

AU - Yang, Haigui

PY - 2011/6/20

Y1 - 2011/6/20

N2 - The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO c2 / GeO2 bilayer passivation. PMA at 450°C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from -0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2 / GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6× 1011 to 2.5× 1011 cm-2 eV-1, as results of the nitrogen termination of defects at the SiO2 / GeO2 interface and/or in the GeO2 interlayer.

AB - The postmetallization annealing (PMA) effect was investigated for a TiN-gate Ge metal-oxide-semiconductor capacitor with an ultrathin SiO c2 / GeO2 bilayer passivation. PMA at 450°C led to the incorporation of nitrogen atoms into the gate stack. Consequently, the flat band voltage shifted from -0.79 to +0.23 V, resulting from a decrease in the dipole at the SiO2 / GeO2 interface and the accompanying creation of a negative charge. The hysteresis decreased from 98 to 27 mV and the interface state density decreased from 6× 1011 to 2.5× 1011 cm-2 eV-1, as results of the nitrogen termination of defects at the SiO2 / GeO2 interface and/or in the GeO2 interlayer.

UR - http://www.scopus.com/inward/record.url?scp=79959608145&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79959608145&partnerID=8YFLogxK

U2 - 10.1063/1.3601480

DO - 10.1063/1.3601480

M3 - Article

AN - SCOPUS:79959608145

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 252102

ER -