Power generation from the Cu26Nb2Ge6S32-based single thermoelectric element with Au diffusion barrier

Raju Chetty, Yuta Kikuchi, Yohan Bouyrie, Priyanka Jood, Atsushi Yamamoto, Koichiro Suekuni, Michihiro Ohta

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

抄録

In this study, we have developed a diffusion barrier for thermoelectric colusite Cu26Nb2Ge6S32 and evaluated the conversion efficiency of the Cu26Nb2Ge6S32-based single thermoelectric element. This Cu26Nb2Ge6S32-based single element with metal diffusion barriers (Ti, Pt, Ni, and Au) was prepared through hot pressing. Microstructural investigations revealed microcrack formation at the interface between the Ti/Pt diffusion barriers and Cu26Nb2Ge6S32 due to the mismatch of the coefficient of thermal expansion between them. Although no cracks were observed at the interface between the Cu26Nb2Ge6S32 and Ni diffusion barriers, secondary phases of Ni-S, Ni-Ge, and Cu-S were formed around the interface. A good match in the coefficient of thermal expansion between Cu26Nb2Ge6S32 and Au resulted in a crack-free interface. Moreover, no secondary phases were found around the Cu26Nb2Ge6S32 and Au interface. Therefore, the Au diffusion barrier allows a reduced specific contact resistance of 4-5 × 10-10 Ω m2. In the conversion efficiency evaluation, the radiative heat transfer was compensated by using silica glass as a reference. The maximum thermoelectric conversion efficiency (ηmax) of ∼3.3% was estimated at the hot-side temperature (Th) of 570 K and the cold-side temperature (Tc) of 297 K for the Cu26Nb2Ge6S32-based single element with a Au diffusion barrier. Three-dimensional finite-element simulations for the Cu26Nb2Ge6S32-based single element predicted the ηmax of ∼4.5% at Th and Tc of 570 K and 297 K, respectively. Therefore, there is further scope for improvement in the performance of the Cu26Nb2Ge6S32-based element.

元の言語英語
ページ(範囲)5184-5192
ページ数9
ジャーナルJournal of Materials Chemistry C
7
発行部数17
DOI
出版物ステータス出版済み - 1 1 2019

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Diffusion barriers
Power generation
Conversion efficiency
Chemical elements
Thermal expansion
Cracks
Microcracks
Hot pressing
Contact resistance
Fused silica
Metals
Heat transfer
Temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Chemistry

これを引用

Power generation from the Cu26Nb2Ge6S32-based single thermoelectric element with Au diffusion barrier. / Chetty, Raju; Kikuchi, Yuta; Bouyrie, Yohan; Jood, Priyanka; Yamamoto, Atsushi; Suekuni, Koichiro; Ohta, Michihiro.

:: Journal of Materials Chemistry C, 巻 7, 番号 17, 01.01.2019, p. 5184-5192.

研究成果: ジャーナルへの寄稿記事

Chetty, Raju ; Kikuchi, Yuta ; Bouyrie, Yohan ; Jood, Priyanka ; Yamamoto, Atsushi ; Suekuni, Koichiro ; Ohta, Michihiro. / Power generation from the Cu26Nb2Ge6S32-based single thermoelectric element with Au diffusion barrier. :: Journal of Materials Chemistry C. 2019 ; 巻 7, 番号 17. pp. 5184-5192.
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title = "Power generation from the Cu26Nb2Ge6S32-based single thermoelectric element with Au diffusion barrier",
abstract = "In this study, we have developed a diffusion barrier for thermoelectric colusite Cu26Nb2Ge6S32 and evaluated the conversion efficiency of the Cu26Nb2Ge6S32-based single thermoelectric element. This Cu26Nb2Ge6S32-based single element with metal diffusion barriers (Ti, Pt, Ni, and Au) was prepared through hot pressing. Microstructural investigations revealed microcrack formation at the interface between the Ti/Pt diffusion barriers and Cu26Nb2Ge6S32 due to the mismatch of the coefficient of thermal expansion between them. Although no cracks were observed at the interface between the Cu26Nb2Ge6S32 and Ni diffusion barriers, secondary phases of Ni-S, Ni-Ge, and Cu-S were formed around the interface. A good match in the coefficient of thermal expansion between Cu26Nb2Ge6S32 and Au resulted in a crack-free interface. Moreover, no secondary phases were found around the Cu26Nb2Ge6S32 and Au interface. Therefore, the Au diffusion barrier allows a reduced specific contact resistance of 4-5 × 10-10 Ω m2. In the conversion efficiency evaluation, the radiative heat transfer was compensated by using silica glass as a reference. The maximum thermoelectric conversion efficiency (ηmax) of ∼3.3{\%} was estimated at the hot-side temperature (Th) of 570 K and the cold-side temperature (Tc) of 297 K for the Cu26Nb2Ge6S32-based single element with a Au diffusion barrier. Three-dimensional finite-element simulations for the Cu26Nb2Ge6S32-based single element predicted the ηmax of ∼4.5{\%} at Th and Tc of 570 K and 297 K, respectively. Therefore, there is further scope for improvement in the performance of the Cu26Nb2Ge6S32-based element.",
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AU - Chetty, Raju

AU - Kikuchi, Yuta

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AU - Jood, Priyanka

AU - Yamamoto, Atsushi

AU - Suekuni, Koichiro

AU - Ohta, Michihiro

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AB - In this study, we have developed a diffusion barrier for thermoelectric colusite Cu26Nb2Ge6S32 and evaluated the conversion efficiency of the Cu26Nb2Ge6S32-based single thermoelectric element. This Cu26Nb2Ge6S32-based single element with metal diffusion barriers (Ti, Pt, Ni, and Au) was prepared through hot pressing. Microstructural investigations revealed microcrack formation at the interface between the Ti/Pt diffusion barriers and Cu26Nb2Ge6S32 due to the mismatch of the coefficient of thermal expansion between them. Although no cracks were observed at the interface between the Cu26Nb2Ge6S32 and Ni diffusion barriers, secondary phases of Ni-S, Ni-Ge, and Cu-S were formed around the interface. A good match in the coefficient of thermal expansion between Cu26Nb2Ge6S32 and Au resulted in a crack-free interface. Moreover, no secondary phases were found around the Cu26Nb2Ge6S32 and Au interface. Therefore, the Au diffusion barrier allows a reduced specific contact resistance of 4-5 × 10-10 Ω m2. In the conversion efficiency evaluation, the radiative heat transfer was compensated by using silica glass as a reference. The maximum thermoelectric conversion efficiency (ηmax) of ∼3.3% was estimated at the hot-side temperature (Th) of 570 K and the cold-side temperature (Tc) of 297 K for the Cu26Nb2Ge6S32-based single element with a Au diffusion barrier. Three-dimensional finite-element simulations for the Cu26Nb2Ge6S32-based single element predicted the ηmax of ∼4.5% at Th and Tc of 570 K and 297 K, respectively. Therefore, there is further scope for improvement in the performance of the Cu26Nb2Ge6S32-based element.

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