Predicting the amount of carbon in carbon nanotubes grown by CH 4 rf plasmas

Atsushi Okita; Yoshiyuki Suda; Atsushi Ozeki; Hirotake Sugawara; Yosuke Sakai; Akinori Oda; Junji Nakamura

doi:10.1063/1.2150599

Predicting the amount of carbon in carbon nanotubes grown by CH ₄ rf plasmas

Atsushi Okita, Yoshiyuki Suda, Atsushi Ozeki, Hirotake Sugawara, Yosuke Sakai, Akinori Oda, Junji Nakamura

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

55 被引用数 (Scopus)

抄録

Carbon nanotubes (CNTs) were grown on Si substrates by rf C H4 plasma-enhanced chemical vapor deposition in a pressure range of 1-10 Torr, and then characterized by scanning electron microscopy. At 1 Torr, the CNTs continued growing up to 60 min, while their height at 4 Torr had leveled off at 20 min. CNTs hardly grew at 10 Torr and amorphous carbon was deposited instead. C H4 plasma was simulated using a one-dimensional fluid model to evaluate the production and transport of radicals, ions, and nonradical neutrals. The amount of simulated carbon supplied to the electrode surface via the flux of radicals and ions such as C H3, C2 H5, and C2 H5+ was consistent with estimations from experimental results.

本文言語	英語
論文番号	014302
ジャーナル	Journal of Applied Physics
巻	99
号	1
DOI	https://doi.org/10.1063/1.2150599
出版ステータス	出版済み - 2006
外部発表	はい

!!!All Science Journal Classification (ASJC) codes

物理学および天文学（全般）

文献へのアクセス

10.1063/1.2150599

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引用スタイル

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title = "Predicting the amount of carbon in carbon nanotubes grown by CH 4 rf plasmas",

abstract = "Carbon nanotubes (CNTs) were grown on Si substrates by rf C H4 plasma-enhanced chemical vapor deposition in a pressure range of 1-10 Torr, and then characterized by scanning electron microscopy. At 1 Torr, the CNTs continued growing up to 60 min, while their height at 4 Torr had leveled off at 20 min. CNTs hardly grew at 10 Torr and amorphous carbon was deposited instead. C H4 plasma was simulated using a one-dimensional fluid model to evaluate the production and transport of radicals, ions, and nonradical neutrals. The amount of simulated carbon supplied to the electrode surface via the flux of radicals and ions such as C H3, C2 H5, and C2 H5+ was consistent with estimations from experimental results.",

author = "Atsushi Okita and Yoshiyuki Suda and Atsushi Ozeki and Hirotake Sugawara and Yosuke Sakai and Akinori Oda and Junji Nakamura",

note = "Funding Information: Work by A. Okita was supported under a 21st century COE program, “Meme-Media Technology Approach to the R&D of Next-Generation Information Technologies” and a Grant-in-Aid (16760240) by MEXT and The Ushio Foundation, Japan. The authors acknowledge provision of the experimental facility by Professors T. Fukui and K. Sueoka at Hokkaido University and Dr. J. Tsujino at Hokkaido Electric and Power Corporation, and valuable discussions on PECVD experiments and plasma modeling with Professor Z. F. Ren at Boston College and Dr. D. Hash at NASA.",

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AU - Sakai, Yosuke

AU - Oda, Akinori

AU - Nakamura, Junji

N1 - Funding Information: Work by A. Okita was supported under a 21st century COE program, “Meme-Media Technology Approach to the R&D of Next-Generation Information Technologies” and a Grant-in-Aid (16760240) by MEXT and The Ushio Foundation, Japan. The authors acknowledge provision of the experimental facility by Professors T. Fukui and K. Sueoka at Hokkaido University and Dr. J. Tsujino at Hokkaido Electric and Power Corporation, and valuable discussions on PECVD experiments and plasma modeling with Professor Z. F. Ren at Boston College and Dr. D. Hash at NASA.

PY - 2006

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N2 - Carbon nanotubes (CNTs) were grown on Si substrates by rf C H4 plasma-enhanced chemical vapor deposition in a pressure range of 1-10 Torr, and then characterized by scanning electron microscopy. At 1 Torr, the CNTs continued growing up to 60 min, while their height at 4 Torr had leveled off at 20 min. CNTs hardly grew at 10 Torr and amorphous carbon was deposited instead. C H4 plasma was simulated using a one-dimensional fluid model to evaluate the production and transport of radicals, ions, and nonradical neutrals. The amount of simulated carbon supplied to the electrode surface via the flux of radicals and ions such as C H3, C2 H5, and C2 H5+ was consistent with estimations from experimental results.

AB - Carbon nanotubes (CNTs) were grown on Si substrates by rf C H4 plasma-enhanced chemical vapor deposition in a pressure range of 1-10 Torr, and then characterized by scanning electron microscopy. At 1 Torr, the CNTs continued growing up to 60 min, while their height at 4 Torr had leveled off at 20 min. CNTs hardly grew at 10 Torr and amorphous carbon was deposited instead. C H4 plasma was simulated using a one-dimensional fluid model to evaluate the production and transport of radicals, ions, and nonradical neutrals. The amount of simulated carbon supplied to the electrode surface via the flux of radicals and ions such as C H3, C2 H5, and C2 H5+ was consistent with estimations from experimental results.

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