The lowest temperature for c-axis preferred oriented thin film growth is investigated for films on different substrate materials. This temperature has a maximum when the lattice constant of the substrate matches that of YBa 2Cu3Ox. This result readily explains a-axis preferred oriented film growth by the template technique. We propose quasilattice-match engineering as a technique for controlling the preferential orientation axis of a part of a YBa2Cu3Ox thin film by using a seed layer whose lattice mismatch differs from that of the substrate. The part of the YBa2Cu3Ox thin film on a PrGaO3 seed layer is a-axis oriented and the film directly deposited on a SrTiO3 substrate is c-axis oriented.
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