Preliminary Study on Laser Annealed NP Junction in Phosphorus Implanted Germanium

Siti Rahmah Aid, Nur Nadhirah Mohd Rashid, Nur Farhana Arissa Jonny, Anthony Centeno, Hiroshi Ikenoue

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

One option in enhancing metal-oxide-semiconductor transistor devices is by replacing silicon with high-mobility material of germanium. However, fabrication of Ge np junction faces low dopant activation problem due to the interaction between dopant and defect that was originated from ion implantation, during thermal annealing process results in dopant deactivation. Eventually, series resistance of np junction between source and drain regions will increase and affect the device drive current. Therefore, minimizing junction resistance remains an important issue to be solved. In this work, ultrafast/high temperature excimer laser of KrF was adopted for post-implantation annealing process in order to achieve high activation level. Laser energy fluences and shot numbers were varied between 100-2000 mJ/cm2 and 1-1000 shots, respectively to investigate the influence of laser parameter to the np junction resistance value, surface morphology and recrystallization. It is found that resistance lower than 300 Ω can be obtained when annealing the substrate between 500-1000 mJ/cm2 with shot number up to two. Taking into consideration on the morphological and structural analyses leads to the conclusion that an optimum parameter for LTA in the sample implanted with phosphorus at higher energy/dose concentration of 40 keV/6.0×1014 cm-2 is 700 mJ/cm2, with shot number of two.

本文言語英語
ホスト出版物のタイトルProceedings - 2020 IEEE International Conference on Semiconductor Electronics, ICSE 2020
出版社Institute of Electrical and Electronics Engineers Inc.
ページ152-155
ページ数4
ISBN(電子版)9781728159676
DOI
出版ステータス出版済み - 7月 2020
イベント14th IEEE International Conference on Semiconductor Electronics, ICSE 2020 - Kuala Lumpur, マレーシア
継続期間: 7月 28 20207月 29 2020

出版物シリーズ

名前IEEE International Conference on Semiconductor Electronics, Proceedings, ICSE
2020-July

会議

会議14th IEEE International Conference on Semiconductor Electronics, ICSE 2020
国/地域マレーシア
CityKuala Lumpur
Period7/28/207/29/20

!!!All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • 電子材料、光学材料、および磁性材料

フィンガープリント

「Preliminary Study on Laser Annealed NP Junction in Phosphorus Implanted Germanium」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル