Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides

Takayuki Watanabe, Keisuke Saito, Minoru Osada, Hiroshi Funakubo

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

抄録

a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 substrates (rutile) at 600°C by metalorganic chemical vapor deposition (MOCVD). Subsequently, the same films were similarly prepared on (101)-oriented conductive materials with the same rutile structure and similar lattice parameters as TiO2, such as RuO2 and IrO2. Their perfect epitaxial growth was confirmed by several X-ray diffraction measurements. RuO2 and IrO2 were deposited on not only structurally equivalent (101)RuO2//(101)TiO2 and (101)IrO2//(101)TiO2 structures, but were also successfully deposited on the corundum (012)Al2O3 and (110)Al2O3 single crystals by the MOCVD and rf-sputtering method, respectively. A well-saturated P-E hysteresis with a remanent polarization above 20 μmC/cm2 was observed for a- and b-axis-oriented Bi4Ti3O12-based materials, (Bi4-xNdx)(Ti3-yVy)O12 (BNTV), that were epitaxially grown on rutile-rutile and rutile-corundum stacking structures. These results should enable broader application of the bismuth layer-structured ferroelectrics.

元の言語英語
ページ(範囲)155-160
ページ数6
ジャーナルUnknown Journal
688
出版物ステータス出版済み - 2002
外部発表Yes

Fingerprint

Corundum
Metallorganic chemical vapor deposition
rutile
Oxides
oxide
Conductive materials
Thin films
Remanence
Epitaxial films
Bismuth
Epitaxial growth
corundum
Aluminum Oxide
Lattice constants
Ferroelectric materials
Sputtering
Hysteresis
Single crystals
X ray diffraction
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials

これを引用

Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides. / Watanabe, Takayuki; Saito, Keisuke; Osada, Minoru; Funakubo, Hiroshi.

:: Unknown Journal, 巻 688, 2002, p. 155-160.

研究成果: ジャーナルへの寄稿記事

@article{c4028570abc8482b8c683fb9fb68b87e,
title = "Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides",
abstract = "a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 substrates (rutile) at 600°C by metalorganic chemical vapor deposition (MOCVD). Subsequently, the same films were similarly prepared on (101)-oriented conductive materials with the same rutile structure and similar lattice parameters as TiO2, such as RuO2 and IrO2. Their perfect epitaxial growth was confirmed by several X-ray diffraction measurements. RuO2 and IrO2 were deposited on not only structurally equivalent (101)RuO2//(101)TiO2 and (101)IrO2//(101)TiO2 structures, but were also successfully deposited on the corundum (012)Al2O3 and (110)Al2O3 single crystals by the MOCVD and rf-sputtering method, respectively. A well-saturated P-E hysteresis with a remanent polarization above 20 μmC/cm2 was observed for a- and b-axis-oriented Bi4Ti3O12-based materials, (Bi4-xNdx)(Ti3-yVy)O12 (BNTV), that were epitaxially grown on rutile-rutile and rutile-corundum stacking structures. These results should enable broader application of the bismuth layer-structured ferroelectrics.",
author = "Takayuki Watanabe and Keisuke Saito and Minoru Osada and Hiroshi Funakubo",
year = "2002",
language = "English",
volume = "688",
pages = "155--160",
journal = "Quaternary International",
issn = "1040-6182",
publisher = "Elsevier Limited",

}

TY - JOUR

T1 - Preparation and characterization of a- and b-axis-oriented epitaxially grown Bi4Ti3O12-based thin films on rutile-type oxides

AU - Watanabe, Takayuki

AU - Saito, Keisuke

AU - Osada, Minoru

AU - Funakubo, Hiroshi

PY - 2002

Y1 - 2002

N2 - a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 substrates (rutile) at 600°C by metalorganic chemical vapor deposition (MOCVD). Subsequently, the same films were similarly prepared on (101)-oriented conductive materials with the same rutile structure and similar lattice parameters as TiO2, such as RuO2 and IrO2. Their perfect epitaxial growth was confirmed by several X-ray diffraction measurements. RuO2 and IrO2 were deposited on not only structurally equivalent (101)RuO2//(101)TiO2 and (101)IrO2//(101)TiO2 structures, but were also successfully deposited on the corundum (012)Al2O3 and (110)Al2O3 single crystals by the MOCVD and rf-sputtering method, respectively. A well-saturated P-E hysteresis with a remanent polarization above 20 μmC/cm2 was observed for a- and b-axis-oriented Bi4Ti3O12-based materials, (Bi4-xNdx)(Ti3-yVy)O12 (BNTV), that were epitaxially grown on rutile-rutile and rutile-corundum stacking structures. These results should enable broader application of the bismuth layer-structured ferroelectrics.

AB - a- and b-axis-oriented epitaxial Bi4Ti3O12 films were prepared on (101)TiO2 substrates (rutile) at 600°C by metalorganic chemical vapor deposition (MOCVD). Subsequently, the same films were similarly prepared on (101)-oriented conductive materials with the same rutile structure and similar lattice parameters as TiO2, such as RuO2 and IrO2. Their perfect epitaxial growth was confirmed by several X-ray diffraction measurements. RuO2 and IrO2 were deposited on not only structurally equivalent (101)RuO2//(101)TiO2 and (101)IrO2//(101)TiO2 structures, but were also successfully deposited on the corundum (012)Al2O3 and (110)Al2O3 single crystals by the MOCVD and rf-sputtering method, respectively. A well-saturated P-E hysteresis with a remanent polarization above 20 μmC/cm2 was observed for a- and b-axis-oriented Bi4Ti3O12-based materials, (Bi4-xNdx)(Ti3-yVy)O12 (BNTV), that were epitaxially grown on rutile-rutile and rutile-corundum stacking structures. These results should enable broader application of the bismuth layer-structured ferroelectrics.

UR - http://www.scopus.com/inward/record.url?scp=0036353527&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036353527&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0036353527

VL - 688

SP - 155

EP - 160

JO - Quaternary International

JF - Quaternary International

SN - 1040-6182

ER -