Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition

K. Ishikawa, T. Sakai, T. Watanabe, H. Funakubo

研究成果: ジャーナルへの寄稿Conference article

抄録

Bi2VO5.5 (BVO) thin films were epitaxially grown on (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition(MOCVD). The lattice mismatch between the film and the substrates affected the film orientation and the crystallinity at a low temperature of 400 °C. The BVO film with c-axis orientation had a low dielectric constant of 43 and low magnitude of leakage current. The c-axis-oriented BVO film displayed the ferroelectricity with two times the remanent polarization (2Pr) and the coercive field (Ec) of 0.06 μC/cm2 and 9 kV/cm, respectively.

元の言語英語
ページ(範囲)189-192
ページ数4
ジャーナルKey Engineering Materials
214-215
出版物ステータス出版済み - 1 1 2002
外部発表Yes
イベント1st Asian Meeting of Electroceramics - Kawasaki, 日本
継続期間: 10 26 200010 27 2000

Fingerprint

Epitaxial films
Metallorganic chemical vapor deposition
Thin films
Ferroelectricity
Lattice mismatch
Remanence
Substrates
Leakage currents
Permittivity
Temperature
strontium titanium oxide

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition. / Ishikawa, K.; Sakai, T.; Watanabe, T.; Funakubo, H.

:: Key Engineering Materials, 巻 214-215, 01.01.2002, p. 189-192.

研究成果: ジャーナルへの寄稿Conference article

@article{f199d0653ed24ce5be3ae6ced297b449,
title = "Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition",
abstract = "Bi2VO5.5 (BVO) thin films were epitaxially grown on (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition(MOCVD). The lattice mismatch between the film and the substrates affected the film orientation and the crystallinity at a low temperature of 400 °C. The BVO film with c-axis orientation had a low dielectric constant of 43 and low magnitude of leakage current. The c-axis-oriented BVO film displayed the ferroelectricity with two times the remanent polarization (2Pr) and the coercive field (Ec) of 0.06 μC/cm2 and 9 kV/cm, respectively.",
author = "K. Ishikawa and T. Sakai and T. Watanabe and H. Funakubo",
year = "2002",
month = "1",
day = "1",
language = "English",
volume = "214-215",
pages = "189--192",
journal = "Key Engineering Materials",
issn = "1013-9826",
publisher = "Trans Tech Publications",

}

TY - JOUR

T1 - Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition

AU - Ishikawa, K.

AU - Sakai, T.

AU - Watanabe, T.

AU - Funakubo, H.

PY - 2002/1/1

Y1 - 2002/1/1

N2 - Bi2VO5.5 (BVO) thin films were epitaxially grown on (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition(MOCVD). The lattice mismatch between the film and the substrates affected the film orientation and the crystallinity at a low temperature of 400 °C. The BVO film with c-axis orientation had a low dielectric constant of 43 and low magnitude of leakage current. The c-axis-oriented BVO film displayed the ferroelectricity with two times the remanent polarization (2Pr) and the coercive field (Ec) of 0.06 μC/cm2 and 9 kV/cm, respectively.

AB - Bi2VO5.5 (BVO) thin films were epitaxially grown on (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition(MOCVD). The lattice mismatch between the film and the substrates affected the film orientation and the crystallinity at a low temperature of 400 °C. The BVO film with c-axis orientation had a low dielectric constant of 43 and low magnitude of leakage current. The c-axis-oriented BVO film displayed the ferroelectricity with two times the remanent polarization (2Pr) and the coercive field (Ec) of 0.06 μC/cm2 and 9 kV/cm, respectively.

UR - http://www.scopus.com/inward/record.url?scp=0036027803&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036027803&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0036027803

VL - 214-215

SP - 189

EP - 192

JO - Key Engineering Materials

JF - Key Engineering Materials

SN - 1013-9826

ER -