Preparation and characterization of c-axis oriented epitaxial Bi2VO5.5 thin films prepared by metalorganic chemical vapor deposition

K. Ishikawa, T. Sakai, T. Watanabe, H. Funakubo

研究成果: Contribution to journalConference article査読

抄録

Bi2VO5.5 (BVO) thin films were epitaxially grown on (100)SrTiO3 and (100)CaRuO3//(100)SrTiO3 substrates by metalorganic chemical vapor deposition(MOCVD). The lattice mismatch between the film and the substrates affected the film orientation and the crystallinity at a low temperature of 400 °C. The BVO film with c-axis orientation had a low dielectric constant of 43 and low magnitude of leakage current. The c-axis-oriented BVO film displayed the ferroelectricity with two times the remanent polarization (2Pr) and the coercive field (Ec) of 0.06 μC/cm2 and 9 kV/cm, respectively.

本文言語英語
ページ(範囲)189-192
ページ数4
ジャーナルKey Engineering Materials
214-215
出版ステータス出版済み - 1 1 2002
外部発表はい
イベント1st Asian Meeting of Electroceramics - Kawasaki, 日本
継続期間: 10 26 200010 27 2000

All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 材料力学
  • 機械工学

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