Preparation of Cr-doped TiO2 thin film of p-type conduction for gas sensor application

A. Ruiz, A. Cornet, G. Sakai, Kengo Shimanoe, J. R. Morante, N. Yamazoe

研究成果: ジャーナルへの寄稿記事

33 引用 (Scopus)

抄録

Titanium dioxide (TiO2) could be doped with as much as 8.7 atom% Cr by means of a sol-gel method. XRD analysis revealed that the powder of Cr (8.7 atom%)-doped TiO2 calcined at 500°C consisted of small crystallites ascribale to anatase structure. The thin film of doped TiO2 (70μm) at this composition was found to behave as a p-type semiconductor on exposure to CO and NO2 in air: it responded to dilute NO2 with a sharp decrease in electrical resistance.

元の言語英語
ページ(範囲)892-893
ページ数2
ジャーナルChemistry Letters
発行部数9
DOI
出版物ステータス出版済み - 9 5 2002

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Chemical sensors
Thin films
Atoms
Acoustic impedance
Carbon Monoxide
Crystallites
Powders
Sol-gel process
Semiconductor materials
Air
Chemical analysis
titanium dioxide

All Science Journal Classification (ASJC) codes

  • Chemistry(all)

これを引用

Preparation of Cr-doped TiO2 thin film of p-type conduction for gas sensor application. / Ruiz, A.; Cornet, A.; Sakai, G.; Shimanoe, Kengo; Morante, J. R.; Yamazoe, N.

:: Chemistry Letters, 番号 9, 05.09.2002, p. 892-893.

研究成果: ジャーナルへの寄稿記事

Ruiz, A. ; Cornet, A. ; Sakai, G. ; Shimanoe, Kengo ; Morante, J. R. ; Yamazoe, N. / Preparation of Cr-doped TiO2 thin film of p-type conduction for gas sensor application. :: Chemistry Letters. 2002 ; 番号 9. pp. 892-893.
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