TY - GEN
T1 - Preparation of diamond nanocrystallites in powder by using a coaxial arc plasma gun
AU - Tominaga, Aki
AU - Hanada, Kenji
AU - Yoshida, Tomohiro
AU - Yoshitake, Tsuyoshi
N1 - Funding Information:
This work was partially supported by Nanotechnology Network Japan (Kyushu Synchrotron Light Research Center, Proposal Nos. 081152N and 090423) and The Kazuchika Okura Memorial Foundation.
PY - 2012
Y1 - 2012
N2 - We suggest a new method for fabricating diamond nanoclusters by employing a coaxial arc plasma gun. Diamond powder comprised of diamond nanoclusters and amorphous carbon was fabricated in vacuum and a hydrogen atmosphere, and the diamond crystallite sizes were estimated to be 1.8, 2.3, and 2.3 nm for the powders prepared at hydrogen pressures of 0, 53.3, and 159.6 Pa respectively, from the X-ray diffraction peaks. The hydrogen ambient gas is not necessarily required for the diamond nanoclusters formation. We consider that this method enables us to form diamond nanoclusters in nucleation owing to a supersaturated condition at a facing plate located in front of an arc plasma gun.
AB - We suggest a new method for fabricating diamond nanoclusters by employing a coaxial arc plasma gun. Diamond powder comprised of diamond nanoclusters and amorphous carbon was fabricated in vacuum and a hydrogen atmosphere, and the diamond crystallite sizes were estimated to be 1.8, 2.3, and 2.3 nm for the powders prepared at hydrogen pressures of 0, 53.3, and 159.6 Pa respectively, from the X-ray diffraction peaks. The hydrogen ambient gas is not necessarily required for the diamond nanoclusters formation. We consider that this method enables us to form diamond nanoclusters in nucleation owing to a supersaturated condition at a facing plate located in front of an arc plasma gun.
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U2 - 10.1557/opl.2012.532
DO - 10.1557/opl.2012.532
M3 - Conference contribution
AN - SCOPUS:84864979412
SN - 9781605113722
T3 - Materials Research Society Symposium Proceedings
SP - 99
EP - 104
BT - Diamond Electronics and Biotechnology - Fundamentals to Applications V
T2 - 2011 MRS Fall Meeting
Y2 - 28 November 2011 through 2 December 2011
ER -