LaGaO3 thin film was prepared on Ni-Fe metal porous substrate by Pulsed Laser Deposition method. By the thermal reduction, the dense NiO-Fe 3O4 substrate is changed to a porous Ni-Fe metal substrate. The volumetric shrinkage and porosity of the substrate are controlled by the reduction temperature. It was found that a thermal expansion property of the Ni-Fe porous metal substrate is almost the same with that of LaGaO 3 based oxide. LaGaO3 based electrolyte films are prepared by the pulsed laser deposition (PLD) method. The film composition is sensitively affected by the deposition temperature. The obtained film is amorphous state after deposition. After post annealing at 1073 K in air, the single phase of LaGaO3 perovskite was obtained. Since the thermal expansion coefficient of the film is almost the same with that of LSGM film, the obtained metal support LSGM film cell shows the high tolerance against a thermal shock and after 6 min startup from room temperature, the cell shows the almost theoretical open circuit potential.
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