Preparation of la1.61GeO5.5 based oxide ion conducting film by pulsed laser deposition method and its application for SOFC

Tatsumi Ishihara, Jingwang Yan

    研究成果: Contribution to journalConference article査読

    抄録

    La1.61GeO5 thin film was fabricated on porous NiO-Ce0.80Sm0.20O2-δ (SDC) substrates by pulsed laser deposition (PLD) under various deposition conditions and the deposition parameters were optimized for obtaining the dense La 1.61GeO5-δ film for the electrolyte of SOFC. It has been found that the high substrate temperature and the low oxygen pressure in chamber are suitable for obtaining the dense La1.61GeO 5-δ thin film on porous NiO-SDC anode substrate. Since the as-deposited film is amorphous state, post-anneal treatment is essential for obtaining the crystalline La1.61GeO5-δ film. Under the optimized deposition condition, a dense and La1.61GeO 5-δ thin film with a thickness of 3 urn can be successfully obtained. The obtained La1.61GeO5-δ film exhibits the electromotive force, which is slightly smaller that that of the theoretical open circuit potential. The power generation property of the cell using the obtained La1.61GeO5-δ film was studied and it was found that the maximum output density of a SOFC single cell using a La 1.61GeO5-δ thin film deposited on a porous NiO-SDC substrate reached to 1948.2 mW/cm2 at 1173 K and 424.4 mW/cm 2 at 873 K.

    本文言語英語
    論文番号K7.7
    ページ(範囲)165-174
    ページ数10
    ジャーナルMaterials Research Society Symposium Proceedings
    835
    出版ステータス出版済み - 6 20 2005
    イベントSolid State Ionics - 2004 - Boston, MA, 米国
    継続期間: 11 29 200412 2 2004

    All Science Journal Classification (ASJC) codes

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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