TY - JOUR
T1 - Preparation of PbZrxTi1-xO3 thin films by KrF excimer laser ablation technique
AU - Kurogi, Hiromitsu
AU - Yamagata, Yukihiko
AU - Ikegami, Tomoaki
AU - Ebihara, Kenji
AU - Bok, Yin Tong
PY - 1996
Y1 - 1996
N2 - A pulsed KrF excimer laser was used to ablate PZT thin films. The composition, crystallization, and ferroelectric properties of the PZT thin films prepared under various conditions were investigated. X ray diffraction (XRD) patterns showed that the PZT thin films prepared on MgO(100) substrates had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provides high quality perovskite films. It was also found that the stoichiometric condition of the deposited films was obtained in ambient oxygen of 100 to approximately 400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were also studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve are discussed.
AB - A pulsed KrF excimer laser was used to ablate PZT thin films. The composition, crystallization, and ferroelectric properties of the PZT thin films prepared under various conditions were investigated. X ray diffraction (XRD) patterns showed that the PZT thin films prepared on MgO(100) substrates had a perovskite - pyrochlore mixed structure. The condition of 100 mTorr oxygen pressure provides high quality perovskite films. It was also found that the stoichiometric condition of the deposited films was obtained in ambient oxygen of 100 to approximately 400 mTorr. The ferroelectric properties of the Pt/PZT/Pt/MgO structure were also studied. The capacitance-voltage characteristics and the corresponding hysteresis loop of the dielectric-electric field curve are discussed.
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U2 - 10.1557/proc-433-237
DO - 10.1557/proc-433-237
M3 - Conference article
AN - SCOPUS:0030388429
SN - 0272-9172
VL - 433
SP - 237
EP - 242
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
T2 - Proceedings of the 1996 MRS Spring Symposium
Y2 - 7 April 1996 through 12 April 1996
ER -