SrBi2Ta2O9 thin films were prepared with high compositional reproducibility by metalorganic chemical vapor deposition (MOCVD) using Bi(CH3)3, Sr[Ta(O·C2H5)6]2 and O2 as source materials. When the deposition temperature was increased, the Bi/Ta and Sr/Ta ratios in the film increased and decreased, respectively. This behavior can be estimated from the deposition temperature dependence of Bi2O3 and Sr-Ta-O films deposited from Bi(CH3)3-O2 and Sr[Ta(O·C2H5)6]2-O2 systems, respectively. Bi/Ta ratio can be controlled by the input gas concentration ratio of Bi(CH3)3 to Sr[Ta(O·C2H5)6]2 at 600 °C. On the other hand, Sr/Ta ratio was independent of the input gas concentration. An almost single phase of SrBi2Ta2O9 was deposited at 670 °C. The remanent polarization and the coercive field of the film deposited at 670 °C following heat treatment at 750 °C for 30 min in O2 atmosphere were 5.0 μC/cm2 and 80 kV/cm, respectively.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||出版済み - 1 1 1999|
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