TY - JOUR
T1 - Preparation of YBa2Cu3O7-y High Tc Thin Films on NdGaO3 Substrate by Laser Ablation
AU - Mukaida, Masashi
AU - Miyazawa, Shintaro
AU - Sasaura, Masahiro
AU - Kuroda, Ken'ichi
PY - 1990/6
Y1 - 1990/6
N2 - As-grown thin films of YBa2Cu3O7-y with a smooth surface were obtained on lattice-matched NdGaO3 substrates by ArF laser ablation deposition. The as-grown thin film has a zero-resistance temperature (Tc) at 90 K. The full width at half-maximum (FWHM) of the X-ray diffraction peak (005) of the thin film was as narrow as 0.12 degrees. These results suggest that the as-grown YBa2Cu3O7-y films on NdGaO3 substrates were high-quality single crystals. NdGaO3 substrates are thought to be a promising substrate for epitaxial growth of YBa2Cu3O7-y high Tc thin films.
AB - As-grown thin films of YBa2Cu3O7-y with a smooth surface were obtained on lattice-matched NdGaO3 substrates by ArF laser ablation deposition. The as-grown thin film has a zero-resistance temperature (Tc) at 90 K. The full width at half-maximum (FWHM) of the X-ray diffraction peak (005) of the thin film was as narrow as 0.12 degrees. These results suggest that the as-grown YBa2Cu3O7-y films on NdGaO3 substrates were high-quality single crystals. NdGaO3 substrates are thought to be a promising substrate for epitaxial growth of YBa2Cu3O7-y high Tc thin films.
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U2 - 10.1143/JJAP.29.L936
DO - 10.1143/JJAP.29.L936
M3 - Article
AN - SCOPUS:0025448590
VL - 29
SP - L936-L939
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6
ER -