Pressure effect in sublimation growth of bulk SiC

Yasuo Kitou, Wook Bahng, Shinichi Nishizawa, Shigehiro Nishino, Kazuo Arai

研究成果: ジャーナルへの寄稿Conference article

2 引用 (Scopus)

抄録

The effect of growth pressure on the impurity incorporation as well as on the crystal quality was investigated in sublimation growth of a bulk SiC single crystal. The growth pressure was varied within the range of 1-100 Torr and it was found that many voids or precipitates were generated in the grown crystals and the Aluminum (Al) impurity incorporation increased during the Si-face growth when the growth pressure decreased. The pressure effect on the Al impurity incorporation with the change of step structure was discussed.

元の言語英語
ジャーナルMaterials Science Forum
338
出版物ステータス出版済み - 1 1 2000
イベントICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
継続期間: 10 10 199910 15 1999

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Pressure effects
Sublimation
pressure effects
sublimation
Impurities
Aluminum
impurities
aluminum
Crystals
crystals
Precipitates
voids
precipitates
Single crystals
single crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Kitou, Y., Bahng, W., Nishizawa, S., Nishino, S., & Arai, K. (2000). Pressure effect in sublimation growth of bulk SiC. Materials Science Forum, 338.

Pressure effect in sublimation growth of bulk SiC. / Kitou, Yasuo; Bahng, Wook; Nishizawa, Shinichi; Nishino, Shigehiro; Arai, Kazuo.

:: Materials Science Forum, 巻 338, 01.01.2000.

研究成果: ジャーナルへの寄稿Conference article

Kitou, Y, Bahng, W, Nishizawa, S, Nishino, S & Arai, K 2000, 'Pressure effect in sublimation growth of bulk SiC', Materials Science Forum, 巻. 338.
Kitou, Yasuo ; Bahng, Wook ; Nishizawa, Shinichi ; Nishino, Shigehiro ; Arai, Kazuo. / Pressure effect in sublimation growth of bulk SiC. :: Materials Science Forum. 2000 ; 巻 338.
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