Pressure Evolution of Characteristic Electronic States in EuRh2Si2 and EuNi2Ge2

Fuminori Honda, Keigo Okauchi, Ai Nakamura, Dai Aoki, Hiromu Akamine, Yousuke Ashitomi, Masato Hedo, Takao Nakama, Yoshichika O'Nuki

研究成果: ジャーナルへの寄稿会議記事査読

2 被引用数 (Scopus)

抄録

EuRh2Si2 and EuNi2Ge2 are known to reveal the valence transition at pressure of about 1 and 2 GPa, respectively, from a divalent state (Eu2+) to a nearly Eu-trivalent state (Eu3-δ′). We have succeeded in growing single crystals of EuRh2Si2 by the Bridgman method and EuNi2Ge2 by the In-flux method. In order to clarify the transition of electronic properties from Eu2+ to Eu3-δ′ in detail, we carried out electrical resistivity measurements under pressure. EuRh2Si2 indicates a remarkable first-order valence transition in the pressure range from 1 to 2 GPa with a sharp hysteresis in the electrical resistivity. At 2.12 GPa, the temperature dependence of the electrical resistivity exhibit a broad peak, implying a moderate heavy-fermion state such as EuPd2Si2 and EuIr2Si2. While, EuNi2Ge2 indicates a first-order valence transition in the pressure range from 2 to 3.22 GPa with a hysteresis in the electrical resistivity. At 3.60 GPa, the electrical resistivity of EuNi2Ge2 also shows a characteristic behavior for a moderate heavy-fermion compound. Pressure - temperature phase diagrams for both compounds are constructed.

本文言語英語
論文番号022004
ジャーナルJournal of Physics: Conference Series
807
2
DOI
出版ステータス出版済み - 4月 6 2017
外部発表はい
イベント18th International Conference on Strongly Correlated Electron Systems, SCES 2016 - Hangzhou, 中国
継続期間: 5月 9 20165月 13 2016

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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