Pressure-induced valence change and moderate heavy fermion state in Eu-compounds

Fuminori Honda, Keigo Okauchi, Yoshiki Sato, Ai Nakamura, Hiromu Akamine, Yosuke Ashitomi, Masato Hedo, Takao Nakama, Tetsuya Takeuchi, Jaroslav Valenta, Jiri Prchal, Vladimir Sechovský, Dai Aoki, Yoshichika Ōnuki

研究成果: Contribution to journalArticle査読

9 被引用数 (Scopus)

抄録

A pressure-induced valence transition has attracted much attention in Eu-compounds. Among them, EuRh2Si2, EuNi2Ge2, and EuCo2Ge2 reveal the valence transition around 1, 2, and 3 GPa, respectively. We have succeeded in growing single crystals of EuT2X2 (T: transition metal, X: Si, Ge) and studied electronic properties under pressure. EuRh2Si2 indicates a first-order valence transition between 1 and 2 GPa, with a large and prominent hysteresis in the electrical resistivity. At higher pressures, the first-order valence transition changes to a cross-over regime with an intermediate valence state. Tuning of the valence state with pressure is reflected in a drastic change of the temperature dependence of the electrical resistivity in EuRh2Si2 single crystals. Effect of pressure on the valence states on EuRh2Si2, EuIr2Si2, EuNi2Ge2, and EuCo2Ge2, as well as an isostructural related compound EuGa4, are reviewed.

本文言語英語
ページ(範囲)182-191
ページ数10
ジャーナルPhysica B: Condensed Matter
536
DOI
出版ステータス出版済み - 5 1 2018
外部発表はい

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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