TY - JOUR
T1 - Process design of superjunction MOSFETs for high drain current capability and low on-resistance
AU - Saito, Wataru
PY - 2017/1/1
Y1 - 2017/1/1
N2 - This paper reports that the process design to cope with both high drain current density and low on-resistance in the superjunction (SJ) MOSFET. The SJ structure is attractive to reduce the specific on-resistance dramatically due to the charge compensation concept. The drain saturation current density, however, is limited by JFET depletion at bottom region of the SJ structure. This is an obstacle to shrink the chip area due to low drain current capability, even if the on-resistance can be reduced by the lateral SJ pitch narrowing. Since the SJ structure depletion is determined by the column active doping density, the SJ process design strongly affects the saturation current density and the on-resistance. The process margin cut and high doping efficiency are key factors for the compatibility between the increase of saturation drain current density and the on-resistance reduction in SJ-MOSFET.
AB - This paper reports that the process design to cope with both high drain current density and low on-resistance in the superjunction (SJ) MOSFET. The SJ structure is attractive to reduce the specific on-resistance dramatically due to the charge compensation concept. The drain saturation current density, however, is limited by JFET depletion at bottom region of the SJ structure. This is an obstacle to shrink the chip area due to low drain current capability, even if the on-resistance can be reduced by the lateral SJ pitch narrowing. Since the SJ structure depletion is determined by the column active doping density, the SJ process design strongly affects the saturation current density and the on-resistance. The process margin cut and high doping efficiency are key factors for the compatibility between the increase of saturation drain current density and the on-resistance reduction in SJ-MOSFET.
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U2 - 10.23919/ISPSD.2017.7988882
DO - 10.23919/ISPSD.2017.7988882
M3 - Conference article
AN - SCOPUS:85028513264
SP - 475
EP - 478
JO - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
JF - Proceedings of the International Symposium on Power Semiconductor Devices and ICs
SN - 1063-6854
M1 - 7988882
T2 - 29th International Symposium on Power Semiconductor Devices and IC's, ISPSD 2017
Y2 - 28 May 2017 through 1 June 2017
ER -