Processing characteristics of SiC wafer by consideration of oxidation effect in different atmospheric environment

Ji Zhang, Syuhei Kurokawa, Terutake Hayashi, Eiji Asakawa, Chengwu Wang

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

Nowadays, as technology developing, traditional semiconductor material such as silicon (Si) could not satisfy the requirement of conditions in high frequency and high power environment. SiC (silicon carbide) has been recently applied in the semiconductor industry and optical components for its high hardness, excellent thermal conductivity, good chemical stability, wide band-gap, high critical electron mobility and so on. However for its hardness and chemical, mechanical stability, SiC is difficult to be processed. To overcome the difficulty in SiC polishing, the processing atmosphere is controlled by using the Bell-Jar type CMP apparatus which covers the entire elements of CMP with a pressure-resistant sealed chamber. The surrounding atmosphere, such as gas pressure and gas species may have a specific influence on CMP characteristics. The key for enhancing the SiC removal rate is regarded as the oxidation. To clarify the effect of oxidation, oxygen rich and lack of oxygen conditions are examined and the mechanism of SiC CMP is evaluated.

本文言語英語
ホスト出版物のタイトルICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014
出版社Institute of Electrical and Electronics Engineers Inc.
ページ279-282
ページ数4
ISBN(電子版)9781479955565
DOI
出版ステータス出版済み - 1 20 2015
イベント11th International Conference on Planarization/CMP Technology, ICPT 2014 - Kobe, 日本
継続期間: 11 19 201411 21 2014

出版物シリーズ

名前ICPT 2014 - Proceedings of International Conference on Planarization/CMP Technology 2014

その他

その他11th International Conference on Planarization/CMP Technology, ICPT 2014
国/地域日本
CityKobe
Period11/19/1411/21/14

All Science Journal Classification (ASJC) codes

  • 電子工学および電気工学
  • ハードウェアとアーキテクチャ

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