Production of crystalline Si nano-clusters using pulsed H2 + SiH4 VHF discharges

Tomohide Kakeya; Kazunori Koga; Masaharu Shiratani; Yukio Watanabe; Michio Kondo

doi:10.1016/j.tsf.2005.08.090

Production of crystalline Si nano-clusters using pulsed H₂ + SiH₄ VHF discharges

Tomohide Kakeya, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Michio Kondo

研究成果: ジャーナルへの寄稿 › 学術誌 › 査読

30 被引用数 (Scopus)

抄録

Crystalline Si nano-clusters are successfully produced using pulsed H ₂ + SiH₄ VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.

本文言語	英語
ページ（範囲）	288-291
ページ数	4
ジャーナル	Thin Solid Films
巻	506-507
DOI	https://doi.org/10.1016/j.tsf.2005.08.090
出版ステータス	出版済み - 5月 26 2006

!!!All Science Journal Classification (ASJC) codes

電子材料、光学材料、および磁性材料
表面および界面
表面、皮膜および薄膜
金属および合金
材料化学

文献へのアクセス

10.1016/j.tsf.2005.08.090

他のファイルとリンク

引用スタイル

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abstract = "Crystalline Si nano-clusters are successfully produced using pulsed H 2 + SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.",

author = "Tomohide Kakeya and Kazunori Koga and Masaharu Shiratani and Yukio Watanabe and Michio Kondo",

note = "Funding Information: This work was supported partly by New Energy and Industrial Technology Development Organization (NEDO). The preparation of the experimental setup by Messrs. T. Kinoshita and H. Matsuzaki was greatly helpful. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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AU - Shiratani, Masaharu

AU - Watanabe, Yukio

AU - Kondo, Michio

N1 - Funding Information: This work was supported partly by New Energy and Industrial Technology Development Organization (NEDO). The preparation of the experimental setup by Messrs. T. Kinoshita and H. Matsuzaki was greatly helpful. Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

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Y1 - 2006/5/26

N2 - Crystalline Si nano-clusters are successfully produced using pulsed H 2 + SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.

AB - Crystalline Si nano-clusters are successfully produced using pulsed H 2 + SiH4 VHF discharges. Their size can be controlled by changing the discharge duration. Si clusters of 1.6 nm in size and 100% crystallinity are produced. Collecting efficiency of them on the substrate decreases by one order of magnitude by heating it from room temperature to 200 °C, while their size is around 3 nm irrelevant to its temperature change.

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