Production of electron cyclotron resonance plasma for uniform deposition using a TE01 mode microwave

Ryota Hidaka, Toru Yamaguchi, Akihisa Tsuruta, Masayoshi Tanaka, Yoshinobu Kawai

    研究成果: ジャーナルへの寄稿記事

    3 引用 (Scopus)

    抄録

    An electron cyclotron resonance (ECR) plasma is produced at pressures up to 10 mTorr with a circular TE01 mode microwave. The plasma density is almost radially uniform even at 10 mTorr. SiC films are formed on silicon wafers by introducing methane gas into the ECR plasma. It is shown that a circular TE01 mode microwave is useful for the ECR plasma chemical vapor deposition (CVD).

    元の言語英語
    ページ(範囲)1590-1593
    ページ数4
    ジャーナルReview of Scientific Instruments
    65
    発行部数5
    DOI
    出版物ステータス出版済み - 12 1 1994

    Fingerprint

    Electron cyclotron resonance
    electron cyclotron resonance
    Microwaves
    Plasmas
    microwaves
    Plasma density
    Silicon wafers
    plasma density
    Chemical vapor deposition
    Methane
    methane
    vapor deposition
    wafers
    silicon
    Gases
    gases

    All Science Journal Classification (ASJC) codes

    • Instrumentation

    これを引用

    Production of electron cyclotron resonance plasma for uniform deposition using a TE01 mode microwave. / Hidaka, Ryota; Yamaguchi, Toru; Tsuruta, Akihisa; Tanaka, Masayoshi; Kawai, Yoshinobu.

    :: Review of Scientific Instruments, 巻 65, 番号 5, 01.12.1994, p. 1590-1593.

    研究成果: ジャーナルへの寄稿記事

    Hidaka, Ryota ; Yamaguchi, Toru ; Tsuruta, Akihisa ; Tanaka, Masayoshi ; Kawai, Yoshinobu. / Production of electron cyclotron resonance plasma for uniform deposition using a TE01 mode microwave. :: Review of Scientific Instruments. 1994 ; 巻 65, 番号 5. pp. 1590-1593.
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    AU - Kawai, Yoshinobu

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