Properties and device applications of hydrogenated amorphous silicon carbide films

M. M. Rahman, C. Y. Yang, D. Sugiarto, A. S. Byrne, M. Ju, K. Tran, K. H. Lui, T. Asano, W. F. Stickle

研究成果: ジャーナルへの寄稿記事

13 引用 (Scopus)

抄録

Hydrogenated amorphous silicon carbide (a-SiC:H) films were deposited with a radio-frequency plasma-enhanced chemical vapor deposition system which utilizes a dc electric field applied independently of the inductively coupled rf field. The source gases were SiH4 and CH4. It was found that application of an electric field directed out of the substrate surface enhances the growth rate and yields some improvements in photoconductivity. The compositions of the films were evaluated by x-ray photoelectron spectroscopy for a range of source gas mixtures. In order to assess the applicability of a-SiC:H thin films, heterojunction a-SiC:H/crystalline Si (c-Si) diodes were fabricated and their electrical characteristics evaluated. The diode capacitance-voltage results confirmed a step junction, which was consistent with the abruptness of the interface demonstrated by high-resolution transmission electron microscopy. The heterojunction diodes also showed good rectifying properties, suggesting promise for a-SiC@B: H in device applications.

元の言語英語
ページ(範囲)7065-7070
ページ数6
ジャーナルJournal of Applied Physics
67
発行部数11
DOI
出版物ステータス出版済み - 12 1 1990

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silicon carbides
amorphous silicon
diodes
heterojunctions
electric fields
photoconductivity
x ray spectroscopy
gas mixtures
radio frequencies
capacitance
photoelectron spectroscopy
vapor deposition
transmission electron microscopy
high resolution
electric potential
thin films
gases

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Rahman, M. M., Yang, C. Y., Sugiarto, D., Byrne, A. S., Ju, M., Tran, K., ... Stickle, W. F. (1990). Properties and device applications of hydrogenated amorphous silicon carbide films. Journal of Applied Physics, 67(11), 7065-7070. https://doi.org/10.1063/1.345055

Properties and device applications of hydrogenated amorphous silicon carbide films. / Rahman, M. M.; Yang, C. Y.; Sugiarto, D.; Byrne, A. S.; Ju, M.; Tran, K.; Lui, K. H.; Asano, T.; Stickle, W. F.

:: Journal of Applied Physics, 巻 67, 番号 11, 01.12.1990, p. 7065-7070.

研究成果: ジャーナルへの寄稿記事

Rahman, MM, Yang, CY, Sugiarto, D, Byrne, AS, Ju, M, Tran, K, Lui, KH, Asano, T & Stickle, WF 1990, 'Properties and device applications of hydrogenated amorphous silicon carbide films', Journal of Applied Physics, 巻. 67, 番号 11, pp. 7065-7070. https://doi.org/10.1063/1.345055
Rahman MM, Yang CY, Sugiarto D, Byrne AS, Ju M, Tran K その他. Properties and device applications of hydrogenated amorphous silicon carbide films. Journal of Applied Physics. 1990 12 1;67(11):7065-7070. https://doi.org/10.1063/1.345055
Rahman, M. M. ; Yang, C. Y. ; Sugiarto, D. ; Byrne, A. S. ; Ju, M. ; Tran, K. ; Lui, K. H. ; Asano, T. ; Stickle, W. F. / Properties and device applications of hydrogenated amorphous silicon carbide films. :: Journal of Applied Physics. 1990 ; 巻 67, 番号 11. pp. 7065-7070.
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