Crystallized SrBi2Ta2O9 (SBT) films were deposited on (111) Ir/TiO2/SiO2/Si substrates at 650°C by metalorganic chemical vapor deposition (MOCVD). Crystallized SBT films from 75 to 200 nm in thickness were directly deposited, but its remanent polarization (Pr) decreased when the film thickness decreased for the film deposited by conventional continuous-MOCVD. This Pr value was increased by 50% by using the source gas pulse-introduction technique (pulse-MOCVD) at 75 nm thicknesses. Moreover, the leakage current was dramatically improved to be on the order of 10-5 A/cm2 up to 600 kV/cm. This film exhibited strong (103) orientation of the crystal axis, while the continuous gas-introduced film showed a mixture of (00l) and (103) orientations.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版物ステータス||出版済み - 7 15 2001|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)