Pulsed laser crystallization of silicon-germanium films

T. Sameshima, H. Watakabe, H. Kanno, T. Sadoh, M. Miyao

研究成果: Contribution to journalConference article査読

19 被引用数 (Scopus)

抄録

Pulsed-XeCl excimer laser crystallization of germanium (Ge) and silicon-germanium (SiGe) alloy films formed on quartz glass substrates was investigated. The transient conductance measurements reveled that germanium films were rapidly melted and solidified because of low latent heat compared to silicon films. Formation of silicon-germanium alloy was also observed in the case of laser annealing the Ge/Si layered structure. The crystalline volume ratio was estimated almost 1.0 for Si0.4Ge0.6 films because of small disordered electronic states at grain boundaries, while it was 0.85 for Si films.

本文言語英語
ページ(範囲)67-71
ページ数5
ジャーナルThin Solid Films
487
1-2
DOI
出版ステータス出版済み - 9 1 2005
イベントInternational Conference on Polycrystalline Semiconductors-Materials, Technologies, Device Applications -
継続期間: 9 5 20049 10 2004

All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

フィンガープリント

「Pulsed laser crystallization of silicon-germanium films」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル