TY - JOUR
T1 - Pulsed laser irradiation as a process of conductive surface formation on nanopolycrystalline diamond
AU - Fukuta, Rei
AU - Yamamoto, Naoya
AU - Ishikawa, Fumitaro
AU - Matsushita, Masafumi
AU - Yoshitake, Tsuyoshi
AU - Ikenoue, Hiroshi
AU - Ohfuji, Hiroaki
AU - Shinmei, Toru
AU - Irifune, Tetsuo
N1 - Funding Information:
Acknowledgments This study was partly supported by the Research Unit Project and the Joint Usage=Research Center PRIUS by Ehime University and JSPS KAKENHI Grant Numbers 15K13957 and 17K18883.
Publisher Copyright:
© 2018 The Japan Society of Applied Physics.
PY - 2018/11
Y1 - 2018/11
N2 - We propose a simple and easy electrode formation technique on nanopolycrystalline diamond (NPD) synthesized by a high-temperature and high-pressure technique. The stronger light absorption nature of NPD than of standard transparent diamond enables the laser irradiation process on NPD. Pulsed laser irradiation using an ArF excimer laser under atmospheric condition drastically reduced the resistance of the NPD surface by forming graphite. Repetition of the laser irradiation reduced the resistance, showing a resistance of 300 Ω for the laser-irradiated area of 100 × 150 μm2. These results indicate the applicability of pulsed laser irradiation to an NPD apparatus having a conductive electrode, as well as electronic device processes.
AB - We propose a simple and easy electrode formation technique on nanopolycrystalline diamond (NPD) synthesized by a high-temperature and high-pressure technique. The stronger light absorption nature of NPD than of standard transparent diamond enables the laser irradiation process on NPD. Pulsed laser irradiation using an ArF excimer laser under atmospheric condition drastically reduced the resistance of the NPD surface by forming graphite. Repetition of the laser irradiation reduced the resistance, showing a resistance of 300 Ω for the laser-irradiated area of 100 × 150 μm2. These results indicate the applicability of pulsed laser irradiation to an NPD apparatus having a conductive electrode, as well as electronic device processes.
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U2 - 10.7567/JJAP.57.118004
DO - 10.7567/JJAP.57.118004
M3 - Article
AN - SCOPUS:85055779806
VL - 57
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 11
M1 - 118004
ER -