Quantification by aberration corrected (S)TEM of boundaries formed by symmetry breaking phase transformations

D. Schryvers, E. K.H. Salje, M. Nishida, A. De Backer, H. Idrissi, S. Van Aert

研究成果: ジャーナルへの寄稿学術誌査読

2 被引用数 (Scopus)

抄録

The present contribution gives a review of recent quantification work of atom displacements, atom site occupations and level of crystallinity in various systems and based on aberration corrected HR(S)TEM images. Depending on the case studied, picometer range precisions for individual distances can be obtained, boundary widths at the unit cell level determined or statistical evolutions of fractions of the ordered areas calculated. In all of these cases, these quantitative measures imply new routes for the applications of the respective materials.

本文言語英語
ページ(範囲)194-199
ページ数6
ジャーナルUltramicroscopy
176
DOI
出版ステータス出版済み - 5月 1 2017

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 器械工学

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