抄録
The present contribution gives a review of recent quantification work of atom displacements, atom site occupations and level of crystallinity in various systems and based on aberration corrected HR(S)TEM images. Depending on the case studied, picometer range precisions for individual distances can be obtained, boundary widths at the unit cell level determined or statistical evolutions of fractions of the ordered areas calculated. In all of these cases, these quantitative measures imply new routes for the applications of the respective materials.
本文言語 | 英語 |
---|---|
ページ(範囲) | 194-199 |
ページ数 | 6 |
ジャーナル | Ultramicroscopy |
巻 | 176 |
DOI | |
出版ステータス | 出版済み - 5月 1 2017 |
!!!All Science Journal Classification (ASJC) codes
- 電子材料、光学材料、および磁性材料
- 原子分子物理学および光学
- 器械工学