Quantification of the internal quantum efficiency in GaN via analysis of the heat generated by non-radiative recombination processes

Yoichi Kawakami, Kohei Inoue, Akio Kaneta, Koichi Okamoto, Mitsuru Funato

研究成果: Contribution to journalArticle査読

3 被引用数 (Scopus)

抄録

The internal quantum efficiency (IQE) in a GaN epilayer is quantified using transient lens (TL) spectroscopy and numerical simulations. TL spectroscopy can optically detect temperature and carrier changes induced in a photo-pumped GaN layer, and the observed temperature change is closely associated with non-radiative recombination processes that create heat. Then numerically solving diffusion equations, which represent the diffusion processes of the photo-generated heat and carriers, provide the spatiotemporal distributions. These distributions are subsequently converted into the refractive index distributions, which act as transient convex or concave lenses. Finally, ray-tracing simulations predict the TL signals. Comparing the experimentally obtained and simulated TL signals quantifies the generated heat and the IQE without the often-adopted assumption that non-radiative recombination processes are negligible at low temperatures.

本文言語英語
論文番号105702
ジャーナルJournal of Applied Physics
117
10
DOI
出版ステータス出版済み - 3 14 2015

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

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