Quantum characterization of si nano-particles fabricated by multi-hollow discharge plasma chemical vapor deposition

Hyunwoong Seo, Giichiro Uchida, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抄録

Si is currently the most widely used material in the photovoltaics. Since the first development of Si photovoltaics, various types of Si solar cells, such as single-crystal and multicrystalline, amorphous and thin film, have been developed and commercialized. The present work focused on Si quantum dots as another route to Si photovoltaics. To apply Si quantum dots to photovoltaic devices, the quantum characteristics of Si nanoparticles should be verified, and so 4 nm crystalline Si nano-particles were fabricated by multi-hollow discharge plasma chemical vapor deposition. The size and distribution of these particles were determined by transmission electron microscopy and compared against theoretically calculated values. These particles were applied to the fabrication of a Schottky cell and the quantum efficiency of the Si quantum dot layer was measured as a function of the incident photon energy. The quantum efficiency was found to exceed 100% and so multiple exciton generation from the Si quantum dots was clearly realized.

元の言語英語
ページ(範囲)636-639
ページ数4
ジャーナルScience of Advanced Materials
8
発行部数3
DOI
出版物ステータス出版済み - 1 1 2016

Fingerprint

Semiconductor quantum dots
Chemical vapor deposition
Plasmas
Quantum efficiency
Amorphous films
Excitons
Solar cells
Photons
Single crystals
Nanoparticles
Crystalline materials
Transmission electron microscopy
Fabrication
Thin films

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

これを引用

Quantum characterization of si nano-particles fabricated by multi-hollow discharge plasma chemical vapor deposition. / Seo, Hyunwoong; Uchida, Giichiro; Itagaki, Naho; Koga, Kazunori; Shiratani, Masaharu.

:: Science of Advanced Materials, 巻 8, 番号 3, 01.01.2016, p. 636-639.

研究成果: ジャーナルへの寄稿記事

@article{4fb625e3cc794f9294a229d207c57902,
title = "Quantum characterization of si nano-particles fabricated by multi-hollow discharge plasma chemical vapor deposition",
abstract = "Si is currently the most widely used material in the photovoltaics. Since the first development of Si photovoltaics, various types of Si solar cells, such as single-crystal and multicrystalline, amorphous and thin film, have been developed and commercialized. The present work focused on Si quantum dots as another route to Si photovoltaics. To apply Si quantum dots to photovoltaic devices, the quantum characteristics of Si nanoparticles should be verified, and so 4 nm crystalline Si nano-particles were fabricated by multi-hollow discharge plasma chemical vapor deposition. The size and distribution of these particles were determined by transmission electron microscopy and compared against theoretically calculated values. These particles were applied to the fabrication of a Schottky cell and the quantum efficiency of the Si quantum dot layer was measured as a function of the incident photon energy. The quantum efficiency was found to exceed 100{\%} and so multiple exciton generation from the Si quantum dots was clearly realized.",
author = "Hyunwoong Seo and Giichiro Uchida and Naho Itagaki and Kazunori Koga and Masaharu Shiratani",
year = "2016",
month = "1",
day = "1",
doi = "10.1166/sam.2016.2520",
language = "English",
volume = "8",
pages = "636--639",
journal = "Science of Advanced Materials",
issn = "1947-2935",
publisher = "American Scientific Publishers",
number = "3",

}

TY - JOUR

T1 - Quantum characterization of si nano-particles fabricated by multi-hollow discharge plasma chemical vapor deposition

AU - Seo, Hyunwoong

AU - Uchida, Giichiro

AU - Itagaki, Naho

AU - Koga, Kazunori

AU - Shiratani, Masaharu

PY - 2016/1/1

Y1 - 2016/1/1

N2 - Si is currently the most widely used material in the photovoltaics. Since the first development of Si photovoltaics, various types of Si solar cells, such as single-crystal and multicrystalline, amorphous and thin film, have been developed and commercialized. The present work focused on Si quantum dots as another route to Si photovoltaics. To apply Si quantum dots to photovoltaic devices, the quantum characteristics of Si nanoparticles should be verified, and so 4 nm crystalline Si nano-particles were fabricated by multi-hollow discharge plasma chemical vapor deposition. The size and distribution of these particles were determined by transmission electron microscopy and compared against theoretically calculated values. These particles were applied to the fabrication of a Schottky cell and the quantum efficiency of the Si quantum dot layer was measured as a function of the incident photon energy. The quantum efficiency was found to exceed 100% and so multiple exciton generation from the Si quantum dots was clearly realized.

AB - Si is currently the most widely used material in the photovoltaics. Since the first development of Si photovoltaics, various types of Si solar cells, such as single-crystal and multicrystalline, amorphous and thin film, have been developed and commercialized. The present work focused on Si quantum dots as another route to Si photovoltaics. To apply Si quantum dots to photovoltaic devices, the quantum characteristics of Si nanoparticles should be verified, and so 4 nm crystalline Si nano-particles were fabricated by multi-hollow discharge plasma chemical vapor deposition. The size and distribution of these particles were determined by transmission electron microscopy and compared against theoretically calculated values. These particles were applied to the fabrication of a Schottky cell and the quantum efficiency of the Si quantum dot layer was measured as a function of the incident photon energy. The quantum efficiency was found to exceed 100% and so multiple exciton generation from the Si quantum dots was clearly realized.

UR - http://www.scopus.com/inward/record.url?scp=84959882269&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84959882269&partnerID=8YFLogxK

U2 - 10.1166/sam.2016.2520

DO - 10.1166/sam.2016.2520

M3 - Article

AN - SCOPUS:84959882269

VL - 8

SP - 636

EP - 639

JO - Science of Advanced Materials

JF - Science of Advanced Materials

SN - 1947-2935

IS - 3

ER -