TY - JOUR
T1 - Quantum dot formation and crystal growth using an atomic nano-mask
AU - Aoyagi, Yoshinobu
AU - Tanaka, Satoru
AU - Hirayama, Hideki
AU - Takeuchi, Misaichi
N1 - Copyright:
Copyright 2017 Elsevier B.V., All rights reserved.
PY - 2001
Y1 - 2001
N2 - A discussion on the role of anti-surfactant atoms in the form of an atomic nano-mask was presented. This was discussed with reference to specific examples of termination of dislocations in growth of GaN and quantum dot formation on the surface of substrate. The role of additional (doped) atoms for crystal growth was demonstrated.
AB - A discussion on the role of anti-surfactant atoms in the form of an atomic nano-mask was presented. This was discussed with reference to specific examples of termination of dislocations in growth of GaN and quantum dot formation on the surface of substrate. The role of additional (doped) atoms for crystal growth was demonstrated.
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U2 - 10.1016/S1386-9477(01)00181-3
DO - 10.1016/S1386-9477(01)00181-3
M3 - Article
AN - SCOPUS:0035476043
VL - 11
SP - 89
EP - 93
JO - Physica E: Low-Dimensional Systems and Nanostructures
JF - Physica E: Low-Dimensional Systems and Nanostructures
SN - 1386-9477
IS - 2-3
ER -