Quantum hall effect and carrier scattering in quasi-free-standing monolayer graphene

Shinichi Tanabe, Makoto Takamura, Yuichi Harada, Hiroyuki Kageshima, Hiroki Hibino

研究成果: Contribution to journalArticle査読

19 被引用数 (Scopus)

抄録

The quantum Hall effect has been observed in quasi-free-standing monolayer graphene on SiC for the first time. This was achieved by decreasing the carrier density while applying gate voltage in top-gated devices. The charge neutrality point was also clearly observed, which has not been reported in top-gated structures. The mobilities at constant carrier densities did not show apparent temperature dependence up to 300 K, and conductivity was linearly dependent on carrier density. These results indicate that Coulomb scattering induced by charged impurities limits the mobility of quasi-free-standing monolayer graphene up to 300 K.

本文言語英語
論文番号125101
ジャーナルApplied Physics Express
5
12
DOI
出版ステータス出版済み - 12 1 2012
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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