Quantum hall effect and carrier scattering in quasi-free-standing monolayer graphene

Shinichi Tanabe, Makoto Takamura, Yuichi Harada, Hiroyuki Kageshima, Hiroki Hibino

研究成果: ジャーナルへの寄稿記事

14 引用 (Scopus)

抄録

The quantum Hall effect has been observed in quasi-free-standing monolayer graphene on SiC for the first time. This was achieved by decreasing the carrier density while applying gate voltage in top-gated devices. The charge neutrality point was also clearly observed, which has not been reported in top-gated structures. The mobilities at constant carrier densities did not show apparent temperature dependence up to 300 K, and conductivity was linearly dependent on carrier density. These results indicate that Coulomb scattering induced by charged impurities limits the mobility of quasi-free-standing monolayer graphene up to 300 K.

元の言語英語
記事番号125101
ジャーナルApplied Physics Express
5
発行部数12
DOI
出版物ステータス出版済み - 12 1 2012
外部発表Yes

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Quantum Hall effect
quantum Hall effect
Graphene
Carrier concentration
Monolayers
graphene
Scattering
scattering
Impurities
impurities
conductivity
temperature dependence
Electric potential
electric potential
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Quantum hall effect and carrier scattering in quasi-free-standing monolayer graphene. / Tanabe, Shinichi; Takamura, Makoto; Harada, Yuichi; Kageshima, Hiroyuki; Hibino, Hiroki.

:: Applied Physics Express, 巻 5, 番号 12, 125101, 01.12.2012.

研究成果: ジャーナルへの寄稿記事

Tanabe, Shinichi ; Takamura, Makoto ; Harada, Yuichi ; Kageshima, Hiroyuki ; Hibino, Hiroki. / Quantum hall effect and carrier scattering in quasi-free-standing monolayer graphene. :: Applied Physics Express. 2012 ; 巻 5, 番号 12.
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