Radiation damage in epitaxial CaF2films on Si substrates by Ar+ion implantation

Hiroshi Ishiwara, Kouzo Orihara, Tanemasa Asano

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

Radiation damage in epitaxial CaF2films on Si substrates produced by 150 keV Ar+ion implantation has been investigated using Rutherford backscattering and channeling techniques. It has been found that CaF2films are more stable than Si crystals for ion bombardment and are not amorphized at such a high dose as 6×1016cm-2. Recovery of the damage by subsequent thermal annealing has also been investigated.

元の言語英語
ページ(範囲)L458-L460
ジャーナルJapanese Journal of Applied Physics
22
発行部数7
DOI
出版物ステータス出版済み - 7 1983

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Radiation damage
Rutherford backscattering spectroscopy
Ion bombardment
radiation damage
Ion implantation
ion implantation
bombardment
backscattering
recovery
Annealing
damage
Recovery
dosage
Crystals
annealing
Substrates
crystals
ions
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Radiation damage in epitaxial CaF2films on Si substrates by Ar+ion implantation. / Ishiwara, Hiroshi; Orihara, Kouzo; Asano, Tanemasa.

:: Japanese Journal of Applied Physics, 巻 22, 番号 7, 07.1983, p. L458-L460.

研究成果: ジャーナルへの寄稿記事

Ishiwara, Hiroshi ; Orihara, Kouzo ; Asano, Tanemasa. / Radiation damage in epitaxial CaF2films on Si substrates by Ar+ion implantation. :: Japanese Journal of Applied Physics. 1983 ; 巻 22, 番号 7. pp. L458-L460.
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