Radiation damage in epitaxial CaF2films on Si substrates by Ar+ion implantation

Hiroshi Ishiwara, Kouzo Orihara, Tanemasa Asano

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

Radiation damage in epitaxial CaF2films on Si substrates produced by 150 keV Ar+ion implantation has been investigated using Rutherford backscattering and channeling techniques. It has been found that CaF2films are more stable than Si crystals for ion bombardment and are not amorphized at such a high dose as 6×1016cm-2. Recovery of the damage by subsequent thermal annealing has also been investigated.

本文言語英語
ページ(範囲)L458-L460
ジャーナルJapanese Journal of Applied Physics
22
7
DOI
出版ステータス出版済み - 7 1983
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Radiation damage in epitaxial CaF<sub>2</sub>films on Si substrates by Ar<sup>+</sup>ion implantation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル