Radiation damage of silicon junction photodiodes by evaporation neutrons from nuclear spallation reactions with 12 gev protons

Tatsumi Arima, Yuzo Asano, Masami Hasegawa, Shigeki Mori, Takahiko Kondo, Masaharu Noguchi, Takashi Ohsugi, Atsushi Taketani

研究成果: ジャーナルへの寄稿記事

3 引用 (Scopus)

抄録

Radiation damage effects of silicon PIN photodiodes were studied by using evaporation neutrons from nuclear spallation reactions of a copper target with 12 GeV protons. Photodiode samples were placed in the backward direction from the copper target and neutron flux was determined by the foil activation method. The average neutron energy was estimated to be about 6 MeV. The damage effects were observed in terms of the increase of leakage current with reverse voltage which is expected to be approximately proportional to radiation dose of neutrons. The present result of the leakage current constant is of the order of 3 to 4 times those measured by using identical photodiodes exposed to reactor neutrons with the average energy of about 2 MeV. The observed energy dependence of the leakage current constant can be qualitatively explained by the NRT model.

元の言語英語
ページ(範囲)1957-1962
ページ数6
ジャーナルJapanese Journal of Applied Physics
28
発行部数10 R
DOI
出版物ステータス出版済み - 10 1989

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silicon junctions
Nuclear reactions
Radiation damage
spallation
Photodiodes
radiation damage
photodiodes
Neutrons
Protons
Evaporation
evaporation
Leakage currents
neutrons
Silicon
leakage
protons
Copper
copper
Neutron flux
flux (rate)

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Radiation damage of silicon junction photodiodes by evaporation neutrons from nuclear spallation reactions with 12 gev protons. / Arima, Tatsumi; Asano, Yuzo; Hasegawa, Masami; Mori, Shigeki; Kondo, Takahiko; Noguchi, Masaharu; Ohsugi, Takashi; Taketani, Atsushi.

:: Japanese Journal of Applied Physics, 巻 28, 番号 10 R, 10.1989, p. 1957-1962.

研究成果: ジャーナルへの寄稿記事

Arima, Tatsumi ; Asano, Yuzo ; Hasegawa, Masami ; Mori, Shigeki ; Kondo, Takahiko ; Noguchi, Masaharu ; Ohsugi, Takashi ; Taketani, Atsushi. / Radiation damage of silicon junction photodiodes by evaporation neutrons from nuclear spallation reactions with 12 gev protons. :: Japanese Journal of Applied Physics. 1989 ; 巻 28, 番号 10 R. pp. 1957-1962.
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abstract = "Radiation damage effects of silicon PIN photodiodes were studied by using evaporation neutrons from nuclear spallation reactions of a copper target with 12 GeV protons. Photodiode samples were placed in the backward direction from the copper target and neutron flux was determined by the foil activation method. The average neutron energy was estimated to be about 6 MeV. The damage effects were observed in terms of the increase of leakage current with reverse voltage which is expected to be approximately proportional to radiation dose of neutrons. The present result of the leakage current constant is of the order of 3 to 4 times those measured by using identical photodiodes exposed to reactor neutrons with the average energy of about 2 MeV. The observed energy dependence of the leakage current constant can be qualitatively explained by the NRT model.",
author = "Tatsumi Arima and Yuzo Asano and Masami Hasegawa and Shigeki Mori and Takahiko Kondo and Masaharu Noguchi and Takashi Ohsugi and Atsushi Taketani",
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T1 - Radiation damage of silicon junction photodiodes by evaporation neutrons from nuclear spallation reactions with 12 gev protons

AU - Arima, Tatsumi

AU - Asano, Yuzo

AU - Hasegawa, Masami

AU - Mori, Shigeki

AU - Kondo, Takahiko

AU - Noguchi, Masaharu

AU - Ohsugi, Takashi

AU - Taketani, Atsushi

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