The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版ステータス||出版済み - 6月 1999|
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