TY - JOUR
T1 - Radiative centers in layer semiconductor p-GaSe doped with Mn
AU - Shigetomi, Shigeru
AU - Ikari, Tetsuo
AU - Nakashima, Hiroshi
PY - 1999/6
Y1 - 1999/6
N2 - The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.
AB - The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.
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U2 - 10.1143/jjap.38.3506
DO - 10.1143/jjap.38.3506
M3 - Article
AN - SCOPUS:0032666392
VL - 38
SP - 3506
EP - 3507
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 6 A
ER -