Radiative centers in layer semiconductor p-GaSe doped with Mn

Shigeru Shigetomi, Tetsuo Ikari, Hiroshi Nakashima

    研究成果: ジャーナルへの寄稿記事

    4 引用 (Scopus)

    抜粋

    The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.

    元の言語英語
    ページ(範囲)3506-3507
    ページ数2
    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    38
    発行部数6 A
    出版物ステータス出版済み - 6 1 1999

      フィンガープリント

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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