Radiative centers in layer semiconductor p-GaSe doped with Mn

Shigeru Shigetomi, Tetsuo Ikari, Hiroshi Nakashima

    研究成果: ジャーナルへの寄稿学術誌査読

    4 被引用数 (Scopus)

    抄録

    The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.

    本文言語英語
    ページ(範囲)3506-3507
    ページ数2
    ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
    38
    6 A
    DOI
    出版ステータス出版済み - 6月 1999

    !!!All Science Journal Classification (ASJC) codes

    • 工学(全般)
    • 物理学および天文学(全般)

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