抜粋
The emission bands of GaSe doped with Mn in the range of 0.1 to 1 at.% have been studied by photoluminescence (PL) measurements. From the temperature dependence of the PL intensity, the peak energy as a function of Mn concentration, and excitation spectrum, we found that the emission band at 1.82 eV is caused by the transition from the conduction band to the acceptor level at 0.30 eV above the valence band.
| 元の言語 | 英語 |
|---|---|
| ページ（範囲） | 3506-3507 |
| ページ数 | 2 |
| ジャーナル | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| 巻 | 38 |
| 発行部数 | 6 A |
| 出版物ステータス | 出版済み - 6 1 1999 |
フィンガープリント
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
これを引用
Shigetomi, S., Ikari, T., & Nakashima, H. (1999). Radiative centers in layer semiconductor p-GaSe doped with Mn. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38(6 A), 3506-3507.