Raman spectra from Ga1-xInxAs epitaxial layers grown on GaAs and InP substrates

K. Kakimoto, T. Katoda

研究成果: Contribution to journalArticle査読

76 被引用数 (Scopus)

抄録

Raman spectra from Ga1-xInxAs epitaxial layers of various compositions were studied. Both disorder-activated acoustic and optical phonons appeared in the midrange of composition independent of substrate materials. Broadening in the LO phonon due to stress was also observed near the interface region between the epitaxial layer and the substrate when there was lattice mismatch between them even if the amount was as small as 0.7%.

本文言語英語
ページ(範囲)826-828
ページ数3
ジャーナルApplied Physics Letters
40
9
DOI
出版ステータス出版済み - 1982
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

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