We demonstrate the rapid (<100 ns) activation and enhancement of solution-processed InZnO thin-film transistors (TFT) via a photo-assisted process: excimer laser annealing (ELA). A single shot is sufficient to enhance mobility from 0.19 cm2 V-1 s-1 to 3.91 cm2 V-1 s-1. Through multiphysics simulation, we confirmed that the process is instantaneous (<100 ns) and induces low substrate temperature suitable for flexible substrates. Analysis of optical properties, elemental concentration, and bonding changes after ELA revealed an improved metal-oxide formation and effective reduction of precursor-related impurities and oxygen vacancy traps. These demonstrate ELA's potential for high-throughput fabrication of solution-processed devices for large-area, transparent, and flexible electronics.
!!!All Science Journal Classification (ASJC) codes