Rapid photo-assisted activation and enhancement of solution-processed InZnO thin-film transistors

Juan Paolo S. Bermundo, Chaiyanan Kulchaisit, Yasuaki Ishikawa, Mami N. Fujii, Hiroshi Ikenoue, Yukiharu Uraoka

研究成果: ジャーナルへの寄稿学術誌査読

3 被引用数 (Scopus)

抄録

We demonstrate the rapid (<100 ns) activation and enhancement of solution-processed InZnO thin-film transistors (TFT) via a photo-assisted process: excimer laser annealing (ELA). A single shot is sufficient to enhance mobility from 0.19 cm2 V-1 s-1 to 3.91 cm2 V-1 s-1. Through multiphysics simulation, we confirmed that the process is instantaneous (<100 ns) and induces low substrate temperature suitable for flexible substrates. Analysis of optical properties, elemental concentration, and bonding changes after ELA revealed an improved metal-oxide formation and effective reduction of precursor-related impurities and oxygen vacancy traps. These demonstrate ELA's potential for high-throughput fabrication of solution-processed devices for large-area, transparent, and flexible electronics.

本文言語英語
論文番号045102
ジャーナルJournal of Physics D: Applied Physics
53
4
DOI
出版ステータス出版済み - 2020

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 音響学および超音波学
  • 表面、皮膜および薄膜

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