Rapid thermal annealing of Si paste film and pn-junction formation

Huan Zhu, Morihiro Sakamoto, Ting Pan, Takaya Fujisaki, Hiroshige Matsumoto, Kungen Teii, Yoshimine Kato

研究成果: Contribution to journalArticle査読

抄録

A Si nanoparticle paste has been studied to form a Si film on a substrate. Rapid thermal annealing (RTA) was conducted in order to recrystallize the Si paste which were prepared by a planetary ball milling grinding n-doped or p-doped Si chips. It was possible to minimize the oxidation during the melting process of Si nanoparticles with this RTA even at 1200 C in 1 s. Lowering of the melting temperature appears to be due to the size effect and release of surface energy from the Si nanoparticles. RTA was conducted in an infrared furnace with temperatures varying from 1150 to 1300 C. Si pn homo-junction structure was also fabricated by coating p-type followed by n-type Si pastes on a carbon substrate. Typical rectifying characteristics and slight photo-induced current was observed.

本文言語英語
論文番号385202
ジャーナルNanotechnology
31
38
DOI
出版ステータス出版済み - 9 18 2020

All Science Journal Classification (ASJC) codes

  • バイオエンジニアリング
  • 化学 (全般)
  • 材料科学(全般)
  • 材料力学
  • 機械工学
  • 電子工学および電気工学

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